Leveraging Public Information to Fit a Compact Hot Carrier Injection Model to a Target Technology

Autor: Alexandros Dimopoulos, Mihai Sima, Stephen W. Neville

Publikováno v: IEEE Access, Vol 11, Pp 21417-21426 (2023)

The design of countermeasures against integrated circuit counterfeit recycling requires the ability to simulate aging in CMOS devices. Electronic design automation tools commonly provide this ability; however, their models must be tuned for use with

Externí odkaz: https://doaj.org/article/325b13cdc031482593e03939c59c22ad

A Temperature-Dependent $dV_{CE}/dt$ and $dI_{C}/dt$ Model for Field-Stop IGBT at Turn-on Transient

Autor: Peng Xue, Pooya Davari

Publikováno v: Xue, P & Davari, P 2023, ' A Temperature-Dependent dVCE/dt and dIC/dt Model for Field-Stop IGBT at Turn-on Transient ', IEEE Transactions on Power Electronics, vol. 38, no. 6, pp. 7128-7141 . https://doi.org/10.1109/TPEL.2023.3256439

In this article, a complete expression for dVCE/dt and dIC/dt at turn-on transient of field-stop (FS) insulated gate bipolar transistor (IGBT) is proposed. With numerical simulation utilized, the critical stray elements and internal physics which hav

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ea577a5e68f270a992d8a860b743137a
https://doi.org/10.1109/tpel.2023.3256439

Embedding the Dynamics of Forced Nonlinear Systems in Multistable Memristor Circuits

Autor: Giacomo Innocenti, Alberto Tesi, Mauro Di Marco, Mauro Forti

Publikováno v: IEEE Journal on Emerging and Selected Topics in Circuits and Systems. 12:735-749

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b34e4fd419480bf764c1b7661999953f
https://doi.org/10.1109/jetcas.2022.3220363

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