Zobrazeno 1 - 10
of 39
pro vyhledávání: '"Inseon Oh"'
Autor:
Jonghyeon Choi, Jungmin Park, Seunghyeon Noh, Jaebyeong Lee, Seunghyun Lee, Daeseong Choe, Hyeonjung Jung, Junhyeon Jo, Inseon Oh, Juwon Han, Soon-Yong Kwon, Chang Won Ahn, Byoung-Chul Min, Hosub Jin, Choong H. Kim, Kyoung-Whan Kim, Jung-Woo Yoo
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-7 (2024)
Abstract Current silicon-based CMOS devices face physical limitations in downscaling size and power loss, restricting their capability to meet the demands for data storage and information processing of emerging technologies. One possible alternative
Externí odkaz:
https://doaj.org/article/43c4a7a0936e46eebc1ab5ac8eb02fd9
Autor:
Junhyeon Jo, Jung Hwa Kim, Choong H. Kim, Jaebyeong Lee, Daeseong Choe, Inseon Oh, Seunghyun Lee, Zonghoon Lee, Hosub Jin, Jung-Woo Yoo
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-8 (2022)
Materials with strong Rashba-type spin-orbit coupling hold promise for spintronic applications and the investigation of topological phases of matter. Here, the authors report a method to generate layer-by-layer defect gradients in a van der Waals mat
Externí odkaz:
https://doaj.org/article/5820821840494860b5b256b089d24ddb
Autor:
Seunguk Song, Inseon Oh, Sora Jang, Aram Yoon, Juwon Han, Zonghoon Lee, Jung-Woo Yoo, Soon-Yong Kwon
Publikováno v:
iScience, Vol 25, Iss 11, Pp 105346- (2022)
Summary: High-performance van der Waals (vdW) integrated electronics and spintronics require reliable current-carrying capacity. However, it is challenging to achieve high current density and air-stable performance using vdW metals owing to the fast
Externí odkaz:
https://doaj.org/article/45d5e4ad84fa47a7b6bad624e39ddd87
Autor:
Inseon Oh, Jungmin Park, Daeseong Choe, Junhyeon Jo, Hyeonjung Jeong, Mi-Jin Jin, Younghun Jo, Joonki Suh, Byoung-Chul Min, Jung-Woo Yoo
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-7 (2021)
Spin-thermoelectrics have great promise for waste heat conversion, however scaling up is challenging for device using standard magnetic insulators. Here, Oh et al demonstrate the molecular-magnet, Prussian blue analogues as a viable candidate for spi
Externí odkaz:
https://doaj.org/article/8c99e89481c643b1856acf1deefb70c1
Autor:
Daeseong Choe, Mi-Jin Jin, Shin-Ik Kim, Hyung-Jin Choi, Junhyeon Jo, Inseon Oh, Jungmin Park, Hosub Jin, Hyun Cheol Koo, Byoung-Chul Min, Seokmin Hong, Hyun-Woo Lee, Seung-Hyub Baek, Jung-Woo Yoo
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-8 (2019)
Complex oxide heterostructures can host two-dimensional electron systems with better properties than bulk materials. Choe et al. show that the combination of the Rashba spin-orbit interaction and Fermi energy at LAO/STO interfaces gives a larger nonr
Externí odkaz:
https://doaj.org/article/6546388233e24686bed7ad3acb232496
Publikováno v:
Frontiers in Future Transportation, Vol 2 (2021)
The recent growth and adoption of unmanned aerial vehicles (UAVs) is due to their low development cost, high aerial mobility, advanced battery technology, rotors, gyroscopes, GPS, cameras, sensors, and wide range of applications. The UAV offers new p
Externí odkaz:
https://doaj.org/article/c6e661d146d54af3b8b561a1ce85d291
Publikováno v:
Journal of the Korean Magnetics Society. 30:145-149
Autor:
Sang Kyu Kwak, Yu-Seong Seo, Yu Jin Kim, Jungseek Hwang, Sun Hwa Lee, Rodney S. Ruoff, Jung-Woo Yoo, Inseon Oh, Won Kyung Seong, Yi Jiang, Se Hun Joo
Publikováno v:
Journal of the American Chemical Society. 142:18346-18354
We report the synthesis and characterization of a two-dimensional (2D) MX2Y2-type (M = metal, X, Y = N, S, O, and X ≠ Y) copper 1,3,5-triamino-2,4,6-benzenetriol metal-organic framework (Cu3(TABTO)2-MOF). The role of oxygen in the synthesis of this
Autor:
Yeoseon Sim, Do Hee Lee, Yinan Liu, Jung Hwa Kim, Woongki Na, Shili Yan, Hyeonsik Cheong, Se-Yang Kim, Jaewon Wang, Jinsung Kwak, Zonghoon Lee, Seunguk Song, Soon-Yong Kwon, Jian-Hao Chen, Jung-Woo Yoo, Inseon Oh
Publikováno v:
Nature Electronics. 3:207-215
A key challenge in the development of two-dimensional (2D) devices is the fabrication of metal–semiconductor junctions with minimal contact resistance and depinned energy levels. An ideal solution for practical applications is to make contacts betw
Autor:
Junhyeon, Jo, Jung Hwa, Kim, Choong H, Kim, Jaebyeong, Lee, Daeseong, Choe, Inseon, Oh, Seunghyun, Lee, Zonghoon, Lee, Hosub, Jin, Jung-Woo, Yoo
Publikováno v:
Nature communications. 13(1)
Defect engineering is one of the key technologies in materials science, enriching the modern semiconductor industry and providing good test-beds for solid-state physics. While homogenous doping prevails in conventional defect engineering, various art