Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Inseok Hur"'
Autor:
Jaehyeong Kim, Dong Myong Kim, Minkyung Bae, Jaeman Jang, Jae-Wook Lee, Woojoon Kim, Inseok Hur, Dae Hwan Kim, Hyun Kwang Jeong
Publikováno v:
JSTS:Journal of Semiconductor Technology and Science. 13:43-47
In this work, we report extraction of the density-of-states (DOS) in polymer-based organic thin film transistors through the multi-frequency C-V spectroscopy. Extracted DOS is implemented into a TCAD simulator and obtained a consistent output curves
Autor:
Mun-Soo Park, Dongsik Kong, Dae Hwan Kim, Sunwoong Choi, Jaehyeong Kim, Minkyung Bae, Dong Myong Kim, Moon-Hyun Yoo, Hyun Kwang Jeong, Keum-Dong Jung, Inseok Hur, Woojoon Kim, Yongsik Kim
Publikováno v:
SID Symposium Digest of Technical Papers. 43:1133-1136
Autor:
Inseok Hur, Ho-Hyun Nahm, Dong Myong Kim, Yong-Sung Kim, Yongsik Kim, Hyun Kwang Jeong, Je-Hun Lee, Dae Hwan Kim, Minkyung Bae, Dongsik Kong, Byung Du Ahn, Woojoon Kim, Gun Hee Kim
Publikováno v:
SID Symposium Digest of Technical Papers. 43:11-14
The negative bias illumination stress (NBIS)-induced VT instability of amorphous InGaZnO thin-film transistors (TFTs) is quantitatively investigated and a shallow donor state-creation model is proposed as a physical mechanism. Furthermore, the differ
Autor:
Minkyung Bae, Yongsik Kim, Woojoon Kim, Jaehyeong Kim, Jaeman Jang, Dongsik Kong, Inseok Hur, Dong Myong Kim, Dae Hwan Kim, Hyun Kwang Jung, Yongwoo Jeon
Publikováno v:
JSTS:Journal of Semiconductor Technology and Science. 11:153-161
In this work, we report the physics-based SPICE model of amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) and demonstrate the SPICE simulation of amorphous InGaZnO (a- IGZO) TFT inverter by using Verilog-A. As key physical parameter,
Autor:
Hyun Kwang Jung, Dae Hwan Kim, Jaehyeong Kim, Dong Myong Kim, Jaeman Jang, Woojoon Kim, Yongsik Kim, Dongsik Kong, Inseok Hur, Minkyung Bae
Publikováno v:
Journal of the Korean Physical Society. 59:505-510
Autor:
Sunil Kim, Sungchul Kim, Yongsik Kim, Joo-Han Kim, Minkyung Bae, Dae Hwan Kim, Jun-Hyun Park, Inseok Hur, Sei Yong Park, Dongsik Kong, Je-Hun Lee, Jae Chul Park, Jaehyeong Kim, Yongwoo Jeon, Chang-Jung Kim, Dong Myong Kim, Jae-Woo Park, Woojoon Kim, Hyunkwang Jung, Byung Du Ahn
Publikováno v:
SID Symposium Digest of Technical Papers. 42:1227-1230
Analytical current and capacitance models for amorphous Indium-Gallium-Zinc-Oxide Thin film transistors (a-IGZO TFTs) are proposed for application to the simulation of a-IGZO TFT-based circuits. The accuracy of the proposed models are verified by com
Autor:
Minkyung Bae, Woojoon Kim, Jun-Hyun Park, Jae-Woo Park, Sei Yong Park, Hyungkwang Jung, Je-Hun Lee, Sungchul Kim, Inseok Hur, Byung Du Ahn, Yongwoo Jeon, Dae Hwan Kim, Joo-Han Kim, Jaehyeong Kim, Dong Myong Kim, Jaemam Jang, Dongsik Kong, Yongsik Kim
Publikováno v:
SID Symposium Digest of Technical Papers. 42:1223-1226
The effect of the active layer thickness (TIGZO) on the constant current stress (CCS)-induced threshold voltage shift (ΔVT) in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) for AMOLED drivers is investigated by using a subgap density-of-st
Autor:
Sungwoo Jun, Woojoon Kim, Jaehyeong Kim, Hyun Kwang Jeong, Dong Myong Kim, Yun Hyeok Kim, Jaewook Lee, Inseok Hur, Chunhyung Jo, Dae Hwan Kim, Hagyoul Bae
Publikováno v:
IEEE Electron Device Letters. 34:250-252
Due to voltage drops across parasitic resistances in semiconductor devices, extracted performance parameters can be strongly dependent on the geometrical structure. In this letter, we report a characterization technique for the intrinsic field-effect
Autor:
Sungwoo Jun, Hyunjun Choi, Dae Hwan Kim, Woojoon Kim, Inseok Hur, Euiyeon Hong, Jaewook Lee, Choon Hyeong Jo, Yun Hyeok Kim, Seonwook Hwang, Dong Myong Kim, Hagyoul Bae, Hyojoon Seo, Daeyoun Yun, Hyun Kwang Jeong
Publikováno v:
IEEE Electron Device Letters. 33:1138-1140
We propose a modified conductance method for extraction of the subgap density of states (DOS) in amorphous indium-gallium-zinc oxide thin-film transistors by using the measured capacitance and conductance through the capacitance-voltage (C-V) measure
Autor:
Mihee Uhm, Euiyoun Hong, Mun-Soo Park, Sunwoong Choi, Dong Myong Kim, Ja Sun Shin, Hagyoul Bae, Won Hee Lee, Daeyoun Yun, Dae Hwan Kim, Inseok Hur, Keum-Dong Jung
Publikováno v:
IEEE Electron Device Letters. 33:534-536
We report a hybrid technique for extraction of structure- and gate-bias-dependent parasitic source/drain (S/D) resistances (RS and RD) in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). In the proposed technique, C- V and I