Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Insaf Lahbib"'
Autor:
Insaf Lahbib, Gregory U'Ren, Hassan Saleh, Brice Grandchamp, Ousmane Sow, Jerome Loraine, Frederic Drillet, Albert Kumar, Imene Lahbib, Lucas Iogna-Prat
Publikováno v:
International Journal of Microwave and Wireless Technologies. 13:517-522
This paper presents the radio frequency (RF) measurements of an SPST switch realized in gallium nitride (GaN)/RF-SOI technology compared to its GaN/silicon (Si) equivalent. The samples are built with an innovative 3D heterogeneous integration techniq
Publikováno v:
ESSDERC
The degradation of integrated field effect transistors (FETs) is an increasingly critical effect for electronic systems and their product lifetimes. To allow reliability investigations during integrated circuit (IC) design already, multiple electroni
Autor:
Guy Imbert, Rosine Coq Germanicus, Dominique Lesenechal, Guillaume Boguszewski, Insaf Lahbib, Françoise Bezerra, Philippe Descamps, Patrick Martin, Laurent Leyssenne, G. Rolland, Cristian Andrei, Sidina Wane, Aziz Doukkali, Damienne Bajon, Thanh Vinh Dinh
Publikováno v:
International Journal of Microwave and Wireless Technologies
International Journal of Microwave and Wireless Technologies, Cambridge University Press/European Microwave Association 2018, Volume 10 (Special Issue 5-6), pp. 690-699. ⟨10.1017/S1759078718000624⟩
International Journal of Microwave and Wireless Technologies, Cambridge University Press/European Microwave Association 2018, Volume 10 (Special Issue 5-6), pp. 690-699. ⟨10.1017/S1759078718000624⟩
In this contribution, the impact of extreme environmental conditions in terms of energy-level radiation of protons on silicon–germanium (SiGe)-integrated circuits is experimentally studied. Canonical representative structures including linear (pass
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::664276bf2880767037d2176a4981a113
https://hal.archives-ouvertes.fr/hal-02190712
https://hal.archives-ouvertes.fr/hal-02190712
Publikováno v:
IECON
In this paper, hot carrier injection mechanism effect on DC and RF performances of n-channel transistors of a 0.25μ CMOS technology in function of gate-source voltage are investigated using an in-house reliability simulation tool. The study conclude
Reliability analysis of low noise amplifiers for wireless applications under high RF power stressing
Autor:
Patrick Martin, Patrice Gamand, Philippe Descamps, Insaf Lahbib, Aziz Doukkali, Dominique Lesenechal
Publikováno v:
2017 International Conference on Advanced Technologies for Communications (ATC).
A reliability study under high RF power stressing was conducted on two SiGe cascode Low Noise Amplifiers (LNA) using an in-house reliability tool. The first LNA was stressed at 19 dBm of RF power during 600 hours. Obtained results (relative degradati
Autor:
Damienne Bajon, Laurent Leyssenne, Cristian Andrei, G. Rolland, Aziz Doukkali, Guy Imbert, Philippe Descamps, Thanh Vinh Dinh, Dominique Lesenechal, Rosine Coq Germanicus, Guillaume Boguszewski, Sidina Wane, Franqoise Bezerra, Patrick Martin, Insaf Lahbib
Publikováno v:
2017 12th European Microwave Integrated Circuits Conference (EuMIC).
In this contribution, impact of extreme environmental conditions in terms of energy-level radiation of protons on SiGe integrated circuits is experimentally studied. Canonical representative structures including linear (passive interconnects/antennas
Autor:
Aziz Doukkali, Patrick Martin, Dominique Defossez, Philippe Descamps, Guy Imbert, Insaf Lahbib
Microelectronics are literally everywhere within our modern everyday lives. They are present in many fields including transport, medicine, telecommunications etc. All of these applications rely on the use of the same basic unit: the MOS transistor (m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dc8a4c132f3b3171be6090ed3124015
https://doi.org/10.1016/b978-1-78548-260-1.50008-x
https://doi.org/10.1016/b978-1-78548-260-1.50008-x
Publikováno v:
Journal of Energy Storage
Journal of Energy Storage, Elsevier, 2016, 6, pp.222-231. ⟨10.1016/j.est.2016.01.007⟩
Journal of Energy Storage, Elsevier, 2016, 6, pp.222-231. ⟨10.1016/j.est.2016.01.007⟩
International audience; Hybrid electrical energy storage systems (HESS) show promise for solving the problems and exploiting the benefits of heterogeneous electrical storage systems (ESS). This paper compares the performance of a lead-acid battery/su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::63acd5361615b3703834c4fc5eb8dade
https://hal.archives-ouvertes.fr/hal-01324453
https://hal.archives-ouvertes.fr/hal-01324453
Publikováno v:
2016 Annual Reliability and Maintainability Symposium (RAMS)
2016 Annual Reliability and Maintainability Symposium (RAMS), Jan 2016, Tucson, United States. pp.7448024, ⟨10.1109/RAMS.2016.7448024⟩
2016 Annual Reliability and Maintainability Symposium (RAMS), 2016, Tucson, United States. pp.7448024, ⟨10.1109/RAMS.2016.7448024⟩
2016 Annual Reliability and Maintainability Symposium (RAMS), Jan 2016, Tucson, United States. pp.7448024, ⟨10.1109/RAMS.2016.7448024⟩
2016 Annual Reliability and Maintainability Symposium (RAMS), 2016, Tucson, United States. pp.7448024, ⟨10.1109/RAMS.2016.7448024⟩
International audience; Reliability simulation is an area of increasing interest as it allows the design of circuits that are both reliable and optimized for circuit performance by transient device degradation calculations. In this paper, Hot Carrier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::30ca46da6029982430555eb1fa73a0dd
https://normandie-univ.hal.science/hal-02184712
https://normandie-univ.hal.science/hal-02184712
Publikováno v:
11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)
11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), 2015, Lausanne, Switzerland. pp.164-167, ⟨10.1109/PRIME.2015.7251360⟩
11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), 2015, Lausanne, Switzerland. pp.164-167, ⟨10.1109/PRIME.2015.7251360⟩
International audience; In this paper, Hot Carrier (HC) injection mechanism effect on NMOSFETs' Threshold Voltage (VTh) is examined. The purpose of this work is to predict VTh degradation, under DC hot carrier stress conditions, of NMOS transistors f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::276ecb603da6a81d434c5eeae38b5189
https://hal-normandie-univ.archives-ouvertes.fr/hal-02184128
https://hal-normandie-univ.archives-ouvertes.fr/hal-02184128