Zobrazeno 1 - 10
of 2 819
pro vyhledávání: '"Inoue, I."'
Autor:
Jang, H., Song, S., Kihara, T., Liu, Y., Lee, S. -J., Park, S. -Y., Kim, M., Kim, H. -D., Coslovich, G., Nakata, S., Kubota, Y., Inoue, I., Tamasaku, K., Yabashi, M., Lee, H., Song, C., Nojiri, H., Keimer, B., Kao, C. -C., Lee, J. -S.
Publikováno v:
Sci. Adv. 8, eabk0832 (2022)
The normal state of high-Tc cuprates has been considered one of the essential topics in high-temperature superconductivity research. However, compared to the high magnetic fields study of it, understanding a photoinduced normal state remains elusive.
Externí odkaz:
http://arxiv.org/abs/2202.04784
Autor:
Nakamura, H., Tomita, H., Akimoto, H., Matsumura, R., Inoue, I. H., Hasegawa, T., Kono, K., Tokura, Y., Takagi, H.
Publikováno v:
J. Phys. Soc. Jpn. 78, 083713 (2009)
Electrostatic carrier doping using a field-effect-transistor structure is an intriguing approach to explore electronic phases by critical control of carrier concentration. We demonstrate the reversible control of the insulator-metal transition (IMT)
Externí odkaz:
http://arxiv.org/abs/0809.4774
Building on a recently introduced model for non-volatile resistive switching, we propose a mechanism for unipolar resistance switching in metal-insulator-metal sandwich structures. The commutation from the high to low resistance state and back can be
Externí odkaz:
http://arxiv.org/abs/0707.3077
Exotic features of a metal/oxide/metal (MOM) sandwich, which will be the basis for a drastically innovative nonvolatile memory device, is brought to light from a physical point of view. Here the insulator is one of the ubiquitous and classic binary-t
Externí odkaz:
http://arxiv.org/abs/cond-mat/0702564
Publikováno v:
Appl. Phys. Lett. 89, 133504 (2006)
Transport properties of SrTiO$_3$-channel field-effect transistors with parylene organic gate insulator have been investigated. By applying gate voltage, the sheet resistance falls below $R_{\Box}$ $\sim$ 10 k$\Omega$ at low temperatures, with carrie
Externí odkaz:
http://arxiv.org/abs/cond-mat/0608243
Autor:
Maiti, Kalobaran, Manju, U., Ray, Sugata, Mahadevan, Priya, Inoue, I. H., Carbone, C., Sarma, D. D.
We investigate the electronic structure of Ca1-xSrxVO3 using careful state-of-the-art experiments and calculations. Photoemission spectra using synchrotron radiation reveal a hitherto unnoticed polarization dependence of the photoemission matrix elem
Externí odkaz:
http://arxiv.org/abs/cond-mat/0509643
Autor:
Eguchi, R., Kiss, T., Tsuda, S., Shimojima, T., Mizokami, T., Yokoya, T., Chainani, A., Shin, S., Inoue, I. H., Togashi, T., Watanabe, S., Zhang, C. Q., Chen, C. T., Arita, M., Shimada, K., Namatame, H., Taniguchi, M.
Publikováno v:
Phys. Rev. Lett. 96, 076402 (2006)
We study the electronic structure of Mott-Hubbard systems SrVO$_{3}$ and CaVO$_3$ with bulk and surface-sensitive high-resolution photoemission spectroscopy (PES), using a VUV laser, synchrotron radiation and a discharge lamp ($h\nu$ = 7 - 21 eV). A
Externí odkaz:
http://arxiv.org/abs/cond-mat/0504576
An n-channel accumulation-type field effect transistor (FET) has been fabricated utilizing a KTaO3 single crystal as an active element and a sputtered amorphous Al2O3 film as a gate insulator. The device demonstrated an ON/OFF ratio of 10^4 and a fie
Externí odkaz:
http://arxiv.org/abs/cond-mat/0312308
Publikováno v:
Appl.Phys.Lett. 83(2003), 1755
A field-effect transistor that employs a perovskite-type SrTiO3 single crystal as the semiconducting channel is revealed to function as n-type accumulation-mode device with characteristics similar to that of organic FET's. The device was fabricated a
Externí odkaz:
http://arxiv.org/abs/cond-mat/0306436
The magnetic properties of perovskite CaVO3 single crystals have been studied by means of magnetoresistance r(T, H) and magnetization M(H) measurements in fields to 18T. At 2 K, the magnetoresistance is positive and a maximum value of Dr(18T)/r(0) =
Externí odkaz:
http://arxiv.org/abs/cond-mat/0202449