Zobrazeno 1 - 10
of 208
pro vyhledávání: '"Inoue, Hisashi"'
Autor:
Chen, Xiangyu, Byambadorj, Zolboo, Yajima, Takeaki, Inoue, Hisashi, Inoue, Isao H., Iizuka, Tetsuya
Conventional neural structures tend to communicate through analog quantities such as currents or voltages, however, as CMOS devices shrink and supply voltages decrease, the dynamic range of voltage/current-domain analog circuits becomes narrower, the
Externí odkaz:
http://arxiv.org/abs/2208.11881
Autor:
Yoon, Hyeok, Swartz, Adrian G., Harvey, Shannon P., Inoue, Hisashi, Hikita, Yasuyuki, Yu, Yue, Chung, Suk Bum, Raghu, Srinivas, Hwang, Harold Y.
SrTiO$_3$ exhibits superconductivity for carrier densities $10^{19}-10^{21}$ cm$^{-3}$. Across this range, the Fermi level traverses a number of vibrational modes in the system, making it ideal for studying dilute superconductivity. We use high-resol
Externí odkaz:
http://arxiv.org/abs/2106.10802
Autor:
Rischau, Carl Willem, Li, Yuke, Fauqué, Benoît, Inoue, Hisashi, Kim, Minu, Bell, Christopher, Hwang, Harold Y., Kapitulnik, Aharon, Behnia, Kamran
Publikováno v:
Phys. Rev. Lett. 126, 077001 (2021)
A liquid of superconducting vortices generates a transverse thermoelectric response. This Nernst signal has a tail deep in the normal state due to superconducting fluctuations. Here, we present a study of the Nernst effect in two-dimensional hetero-s
Externí odkaz:
http://arxiv.org/abs/2007.01110
Autor:
Devarakonda, Aravind, Inoue, Hisashi, Fang, Shiang, Ozsoy-Keskinbora, Cigdem, Suzuki, Takehito, Kriener, Markus, Fu, Liang, Kaxiras, Efthimios, Bell, David C., Checkelsky, Joseph G.
Publikováno v:
Science 370, 231-236 (2020)
Advances in low-dimensional superconductivity are often realized through improvements in material quality. Apart from a small group of organic materials, there is a near absence of clean-limit two-dimensional (2D) superconductors, which presents an i
Externí odkaz:
http://arxiv.org/abs/1906.02065
Publikováno v:
Applied Physics Letters 115, 072403 (2019)
FeSn is a room-temperature antiferromagnet expected to host Dirac fermions in its electronic structure. The interplay of magnetic degree of freedom and the Dirac fermions makes FeSn an attractive platform for spintronics and electronic devices. While
Externí odkaz:
http://arxiv.org/abs/1905.13073
Autor:
Inoue, Hisashi, Han, Minyong, Hu, Mengli, Suzuki, Takehito, Liu, Junwei, Checkelsky, Joseph G.
Publikováno v:
Phys. Rev. Materials 3, 101202 (2019)
Realizing quantum materials in few atomic layer morphologies is a key to both observing and controlling a wide variety of exotic quantum phenomena. This includes topological electronic materials, where the tunability and dimensionality of few layer m
Externí odkaz:
http://arxiv.org/abs/1904.02582
Publikováno v:
In Enzyme and Microbial Technology April 2023 165
