Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Innokenty Novikov"'
Autor:
Andrey Babichev, Sergey Blokhin, Andrey Gladyshev, Leonid Karachinsky, Innokenty Novikov, Alexey Blokhin, Mikhail Bobrov, Yakov Kovach, Alexander Kuzmenkov, Vladimir Nevedomsky, Nikolay Maleev, Evgenii Kolodeznyi, Kirill Voropaev, Alexey Vasilyev, Victor Ustinov, Anton Egorov, Saiyi Han, Si-Cong Tian, Dieter Bimberg
Publikováno v:
Photonics, Vol 10, Iss 6, p 660 (2023)
A detailed experimental analysis of the impact of device topology on the performance of 1550 nm VCSELs with an active region based on thin InGaAs/InAlGaAs quantum wells and a composite InAlGaAs buried tunnel junction is presented. The high-speed perf
Externí odkaz:
https://doaj.org/article/61581f9d1e4c403caf1aecb6d21f2689
Autor:
Andrey Babichev, Sergey Blokhin, Evgenii Kolodeznyi, Leonid Karachinsky, Innokenty Novikov, Anton Egorov, Si-Cong Tian, Dieter Bimberg
Publikováno v:
Photonics, Vol 10, Iss 3, p 268 (2023)
Single-mode long-wavelength (LW) vertical-cavity surface-emitting lasers (VCSELs) present an inexpensive alternative to DFB-lasers for data communication in next-generation giga data centers, where optical links with large transmission distances are
Externí odkaz:
https://doaj.org/article/82b59beaef6b445ab5fdc458720610a9
Autor:
Sergey Blokhin, Andrey Babichev, Andrey Gladyshev, Leonid Karachinsky, Innokenty Novikov, Alexey Blokhin, Stanislav Rochas, Dmitrii Denisov, Kirill Voropaev, Alexander Ionov, Nikolay Ledentsov, Anton Egorov
Publikováno v:
Electronics Letters, Vol 57, Iss 18, Pp 697-698 (2021)
Abstract The 1300 nm range vertical‐cavity surface‐emitting lasers with the active region based on InGaAs/InGaAlAs superlattice are fabricated using molecular‐beam epitaxy and the double wafer‐fusion technique. Lasers with the buried tunnel j
Externí odkaz:
https://doaj.org/article/3a12465c1f87409288f7b2d16f15df02
Autor:
Andrey Babichev, Sergey Blokhin, Andrey Gladyshev, Leonid Karachinsky, Innokenty Novikov, Alexey Blokhin, Mikhail Bobrov, Nikolay Maleev, Vladislav Andryushkin, Evgenii Kolodeznyi, Dmitrii Denisov, Natalia Kryzhanovskaya, Kirill Voropaev, Victor Ustinov, Anton Egorov, Hui Li, Si-Cong Tian, Saiyi Han, Georgiy Sapunov, Dieter Bimberg
Publikováno v:
IEEE Photonics Technology Letters. 35:297-300
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5475ccd0da65f7b73d2583e265648a78
https://doi.org/10.1109/lpt.2023.3241001
https://doi.org/10.1109/lpt.2023.3241001
Autor:
Bimberg, Andrey Babichev, Sergey Blokhin, Andrey Gladyshev, Leonid Karachinsky, Innokenty Novikov, Alexey Blokhin, Mikhail Bobrov, Yakov Kovach, Alexander Kuzmenkov, Vladimir Nevedomsky, Nikolay Maleev, Evgenii Kolodeznyi, Kirill Voropaev, Alexey Vasilyev, Victor Ustinov, Anton Egorov, Saiyi Han, Si-Cong Tian, Dieter
Publikováno v:
Photonics; Volume 10; Issue 6; Pages: 660
A detailed experimental analysis of the impact of device topology on the performance of 1550 nm VCSELs with an active region based on thin InGaAs/InAlGaAs quantum wells and a composite InAlGaAs buried tunnel junction is presented. The high-speed perf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=multidiscipl::906908bcfcc25e21011a8226602c16e4
Publikováno v:
Semiconductors. 39:1415
Lasers based on InAs/InGaAs quantum dots grown on metamorphic (In,Ga,Al)As layers deposited by MBE on GaAs substrates exhibited emission near 1.5 μm with a differential quantum efficiency of about 50%. The narrow-stripe lasers operate in a single tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcdf57c83a4c328b0a44fb6b92ee192e
https://doi.org/10.1134/1.2140316
https://doi.org/10.1134/1.2140316
Autor:
Georgy Zegrya, Innokenty Novikov
Publikováno v:
Semiconductors. 39:481
Semiconductor laser heterostructures containing five and ten sheets of InAs/GaAs QDs on GaAs substrates, with an emission wavelength of ∼1.3 μm, have been studied. Dependences of the nonradiative lifetime and effective Auger coefficient in QDs are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b24a8ae1ab227e4e13583509ab78d07f
https://doi.org/10.1134/1.1900267
https://doi.org/10.1134/1.1900267
Autor:
Karachinsky, L. Ya, Kettler, T., Gordeev, N. Yu, Innokenty Novikov, Maximov, M. V., Shernyakov, Yu M., Kryzhanovskaya, N. V., Zhukov, A. E., Semenova, E. S., Vasil Ev, A. P., Ustinov, V. M., Ledentsov, N. N., Kovsh, A. R., Shchukin, V. A., Mikhrin, S. S.
Publikováno v:
Scopus-Elsevier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::0f15d38d7567c22308e35248342f388b
http://www.scopus.com/inward/record.url?eid=2-s2.0-29144490054&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-29144490054&partnerID=MN8TOARS
