Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Innocenzo Tortorelli"'
Autor:
Giovanna Dalla Libera, Enrico Varesi, M. Borghi, Elisabetta Palumbo, Roberto Annunziata, Prelini Carlo Luigi, Anna Gandolfo, Leonardo Ravazzi, Innocenzo Tortorelli, Paola Zuliani, Davide Erbetta, Nicola Pessina
Publikováno v:
IEEE Transactions on Electron Devices. 60:4020-4026
Phase change memory (PCM) is the most mature among the novel memory concepts. Embedded PCM technology can be a real breakthrough for process cost saving and performances. Nevertheless, for specific applications some improvement in high temperature da
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3eed0101a31a758f61f5003c1a0a2c9b
https://doi.org/10.1109/ted.2013.2285403
https://doi.org/10.1109/ted.2013.2285403
Publikováno v:
IEEE Electron Device Letters. 33:594-596
The phase-change memory technology is based on a chalcogenide compound able to reversibly switch between two stable states, namely, an amorphous high-resistive state and a crystalline low-resistive one, enabling the storage of the logical bit. Such p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::369a519e26d105bc848d0e5ea8c24d04
https://doi.org/10.1109/led.2012.2185674
https://doi.org/10.1109/led.2012.2185674
Publikováno v:
Wireless Communications and Mobile Computing. 2:847-866
The capacity of wireless communications systems based upon Direct-Sequence Code Division Multiple Access (DS-CDMA) is severely reduced by Multiple Access Interference (MAI), especially at higher bit rates. Therefore, methods aimed at limiting the MAI
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6af66ec95b8c268032fd437a87ea0ad7
https://doi.org/10.1002/wcm.100
https://doi.org/10.1002/wcm.100
Autor:
Agostino Pirovano, Roberto Bez, Innocenzo Tortorelli, A. Modelli, Andrea Redaelli, S. Lavizzari, Camillo Bresolin, Fabio Pellizzer, Davide Erbetta, Enrico Varesi, Mattia Boniardi
Publikováno v:
2012 4th IEEE International Memory Workshop.
The phase change active material exploration represents an important stage in order to further strengthen the know-how on the Phase Change Memory (PCM) technology. This work reports a path for PCM material exploration toward the tellurium poor region
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72f012c550e4dfe0847a5831823ed442
https://doi.org/10.1109/imw.2012.6213679
https://doi.org/10.1109/imw.2012.6213679
Autor:
Innocenzo Tortorelli, Davide Erbetta, A. Modelli, Daniele Ielmini, Mario Allegra, Agostino Pirovano, Enrico Varesi, Michele Magistretti, Roberto Bez, Camillo Bresolin, Fabio Pellizzer, Andrea L. Lacaita, Andrea Redaelli, Mattia Boniardi
The phase-change memory (PCM) technology is considered as one of the most attractive non-volatile memory concepts for next generation data storage. It relies on the ability of a chalcogenide material belonging to the Ge–Sb–Te compound system to r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::06253dff5de431804e75d250ff7035c7
http://hdl.handle.net/11311/637376
http://hdl.handle.net/11311/637376
Autor:
Innocenzo Tortorelli, F. Pellizzer, Mattia Boniardi, Agostino Pirovano, Daniele Ielmini, Andrea Redaelli
Publikováno v:
Journal of Applied Physics. 105:084506
The time-stability of the electrical characteristics of chalcogenide materials is one of the most important issues for their use in nonvolatile solid state memory applications. In particular the electrical conduction of the glassy phase evolves with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dff32dd740a76411267b4c43d8fda5e1
https://doi.org/10.1063/1.3109063
https://doi.org/10.1063/1.3109063