Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Inn-hao Chen"'
Autor:
Inn-hao Chen, 陳英豪
103
In this thesis, fabrication and characterization of germanium (Ge) quantum-dot (QD) single-electron transistors (SETs) as well as the associated applications were investigated. Using the fidelity of spacer-layer deposition and nanopattern-de
In this thesis, fabrication and characterization of germanium (Ge) quantum-dot (QD) single-electron transistors (SETs) as well as the associated applications were investigated. Using the fidelity of spacer-layer deposition and nanopattern-de
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/89943931520781236323
Autor:
Inn-hao Chen, 陳英豪
97
This thesis demonstrates that polycrystalline silicon (poly-Si) thin-film transistors (TFTs) incorporating germanium (Ge) quantum dots (QDs) in the gate oxide were fabricated as efficient blue to near ultraviolet phototransistors for light de
This thesis demonstrates that polycrystalline silicon (poly-Si) thin-film transistors (TFTs) incorporating germanium (Ge) quantum dots (QDs) in the gate oxide were fabricated as efficient blue to near ultraviolet phototransistors for light de
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/6nck4j
Autor:
Inn Hao Chen, Ching Yuan Su, Kuan I. Ho, Chi-Hsien Huang, Takeru Okada, Chao-Sung Lai, Lain-Jong Li, Pei-Wen Li, Chien Chou, Seiji Samukawa
Publikováno v:
Carbon. 61:229-235
Top-down process, comprising lithography and plasma etching is widely used in very-large-scale integration due to its scalability, has the greatest potential to fabricate graphene nanoribbon based nanoelectronic devices for large-scale intergraded ci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b43839f15d57bfc5fd519b5eb53d56b2
https://doi.org/10.1016/j.carbon.2013.04.099
https://doi.org/10.1016/j.carbon.2013.04.099
Publikováno v:
ECS Meeting Abstracts. :262-262
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74c9e1ea615ed79b2052f658ac2fcd8b
https://doi.org/10.1149/ma2012-02/3/262
https://doi.org/10.1149/ma2012-02/3/262
Publikováno v:
ECS Meeting Abstracts. :3023-3023
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1c359753c949e2e703f65fa6b200eff
https://doi.org/10.1149/ma2012-02/41/3023
https://doi.org/10.1149/ma2012-02/41/3023