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pro vyhledávání: '"Ingsong Yu"'
Autor:
Kangping Liu, Odile Cristini-Robbe, Omar Ibrahim Elmi, Shuang Long Wang, Bin Wei, Ingsong Yu, Xavier Portier, Fabrice Gourbilleau, Didier Stiévenard, Tao Xu
Publikováno v:
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-8 (2019)
Abstract Passivation is a key process for the optimization of silicon p-n junctions. Among the different technologies used to passivate the surface and contact interfaces, alumina is widely used. One key parameter is the thickness of the passivation
Externí odkaz:
https://doaj.org/article/8e7082a42d8c456aae0234a052efbd2f
