Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Ingrid Koslow"'
Autor:
Michael Kneissl, Sabine Alamé, Martin Frentrup, Patrick Vogt, Dimitri Henning, Tim Wernicke, Norbert Esser, Christoph Reich, Ingrid Koslow, D. Skuridina, Andrea Navarro Quezada
Publikováno v:
Materials Science in Semiconductor Processing. 55:7-11
Multiple surface reconstructions have been observed on ultra-thin GaN (0001) layers of 1–10 nm thickness, covering a 3 nm thick In0.11Ga0.89N single quantum well in a GaN matrix. Low energy electron diffraction patterns show (2×2) and (√3×√3)
Autor:
Brian Corbett, Michael Winkler, Peter J. Parbrook, Michael Kneissl, Martin Feneberg, Monir Rychetsky, Ingrid Koslow, Tim Wernicke, Rüdiger Goldhahn, Stefan Freytag, Duc V. Dinh
Publikováno v:
Applied Physics Letters. 116:062106
InxGa1−xN/GaN multiple quantum well structures (x = 0.13 and 0.18) embedded into p–i–n diodes on ( 20 2 ¯ 1 ¯) and ( 20 2 ¯ 1) oriented GaN substrates were investigated by electroreflectance, photocurrent, and electroluminescence. Transition
Autor:
Feng Wu, Shuji Nakamura, Ingrid Koslow, Alexey E. Romanov, Po Shan Hsu, James S. Speck, Erin C. Young, Matthew T. Hardy, Steven P. DenBaars
Publikováno v:
Journal of Crystal Growth. 388:48-53
The onset of plastic relaxation via misfit dislocation (MD) formation in In x Ga 1− x N layers grown by metal-organic chemical vapor deposition on the ( 11 2 ¯ 2 ) semipolar plane of GaN substrates is investigated using high-resolution X-ray diffr
Autor:
Tim Wernicke, Tore Niermann, Hsin-Hung Yao, Martin Guttmann, Johannes Enslin, Bernd Witzigmann, Xiaohang Li, Michael Narodovitch, Norman Susilo, Michael Lehmann, Georgios G. Roumeliotis, Monir Rychetsky, Michael Kneissl, Marcel Schilling, Ingrid Koslow
Publikováno v:
JAPANESE JOURNAL OF APPLIED PHYSICS
Due to changes in the spontaneous and piezoelectric polarization, AlGaN/GaN heterostructures exhibit strong polarization fields at heterointerfaces. For quantum wells, the polarization fields lead to a strong band bending and a redshift of the emissi
Autor:
Ingrid Koslow, Michael Kneissl, Ulrich T. Schwarz, Tilman Schimpke, Christian Mounir, Tim Wernicke, Martin Strassburg
Publikováno v:
Physical Review B. 93
We investigate the influence of inhomogeneous broadening on the optical polarization properties of high-inclination semipolar and nonpolar ${\mathrm{In}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{N}$/GaN quantum wells. Different planar m-plane and $
Autor:
Michael Kneissl, Ulrich T. Schwarz, Tim Wernicke, Steven P. DenBaars, Leah Y. Kuritzky, James S. Speck, Nicholas L. Adamski, Shuji Nakamura, Christian Mounir, Christopher D. Pynn, Sang Ho Oh, Ingrid Koslow
Publikováno v:
Journal of Applied Physics. 123:085705
In the framework of k · p-theory, semipolar ( 20 2 ¯ 1 ) and ( 20 2 ¯ 1 ¯ ) InGaN/GaN quantum wells (QWs) have equivalent band structures and are expected to have identical optical polarization properties. However, ( 20 2 ¯ 1 ) QWs consistently
Autor:
Johannes Wild, Michael Kneissl, Ingrid Koslow, Monir Rychetsky, Tim Wernicke, Veit Hoffmann, Markus Weyers, Josef Zweck, Jens Rass, Bernd Witzigmann, Baran Avinc, Konrad Bellmann, Luca Sulmoni
Publikováno v:
Journal of Applied Physics. 119:095713
The polarization fields in wurtzite group III-nitrides strongly influence the optical properties of InAlGaN-based light emitters, e.g., the electron and hole wave function overlap in quantum wells. In this paper, we propose a new approach to determin
Autor:
Steven P. DenBaars, James S. Speck, Daniel F. Feezell, Matthew T. Hardy, Ingrid Koslow, Po S. Hsu, Shuji Nakamura
Publikováno v:
Conference on Lasers and Electro-Optics 2012.
Growth on relaxed buffers provides a potential route to reduce difficulties caused by high strain (∼ 3%) in the In 0.3 Ga 0.7 N active regions of green laser diodes (LDs). We demonstrate a blue LD with partially relaxed n- and p-side waveguide/clad
Autor:
Jae Bum Park, Michael Kneissl, Tore Niermann, Dirk Berger, Ingrid Koslow, A. Knauer, Markus Weyers, Michael Lehmann
Publikováno v:
Applied Physics Letters. 105:094102
While electron holography in the transmission electron microscope offers the possibility to measure maps of the electrostatic potential of semiconductors down to nanometer dimensions, these measurements are known to underestimate the absolute value o
Publikováno v:
Applied Physics Express. 7:031003
Long-wavelength (>540 nm) single-quantum-well light-emitting diodes were grown pseudomorphically on stress-relaxed InxGa1−xN buffer layers on the orientation. Basal plane dislocation glide led to the formation of misfit dislocations at the bottom o