Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Ingo Riedel"'
Autor:
Christian Schubbert, Michael Richter, Patrick Eraerds, Thomas Dalibor, Ingo Riedel, Jörg Palm, Jürgen Parisi
Publikováno v:
Solar Energy Materials and Solar Cells. 157:146-153
We use a calibrated realistic 2D device simulation structure of a single cell from a monolithic interconnected Cu(In,Ga)(Se,S) 2 solar module to investigate the impact of modifications of the patterning laser scribe P1 and the trench properties on th
Autor:
Andreas Vetter, Michael Richter, Bernhard Hofbeck, Christoph J. Brabec, Peter Kubis, J. Ohland, Ingo Riedel, S. J. Heise, Finn Babbe
Publikováno v:
Progress in Photovoltaics: Research and Applications. 24:1001-1008
Author(s): Vetter, A; Babbe, FS; Hofbeck, B; Kubis, P; Richter, M; Heise, SJ; Ohland, J; Riedel, I; Brabec, CJ | Abstract: Local electric defects may result in considerable performance losses in solar cells. Infrared (IR) thermography is one importan
Autor:
Jürgen Parisi, Thomas Dalibor, Jörg Palm, Michael Richter, Patrick Eraerds, Ingo Riedel, Christian Schubbert
Publikováno v:
physica status solidi (a). 213:1276-1283
We investigated an open-circuit voltage phenomenon of Cu(In,Ga)(Se,S) thin-film solar cells observed by device simulations which is manifested in an anomalous temperature dependence (meaning deviating from the linear dependence caused by the temperat
Autor:
Janet Neerken, Ingo Riedel, Thomas Unold, Maria S. Hammer, Andreas Rahm, S. Puttnins, F. Daume, Alexander Braun, Marius Grundmann
Publikováno v:
Thin Solid Films. 582:85-90
The variation of the sodium content in low-temperature grown Cu(In,Ga)Se2 (CIGSe) absorbers has a strong influence on the doping level and the photoelectrical properties of the bare CIGSe films and corresponding solar cells. The negative impact of ex
Publikováno v:
Thin Solid Films. 582:332-335
Despite 20 years of research on Cu(In,Ga)Se2 (CIGSe) solar cells there is still no conclusive model to explain the electronic properties of the back contact between the CIGSe absorber and the molybdenum electrode. For this interface, Schottky-type as
Autor:
Michael Richter, Patrick Eraerds, Christian Schubbert, Jürgen Parisi, Thomas Dalibor, Ingo Riedel, Jörg Palm
Publikováno v:
Solar Energy Materials and Solar Cells. 132:162-171
The modeling of Cu(In,Ga)(Se,S) 2 thin film solar cells enables us to understand device behavior while a reliable simulation with forecasting purpose needs to cover manifold measurement responses. We built up a simulation model to reproduce thermal a
Autor:
Michael Richter, Patrick Eraerds, Ingo Riedel, Christian Schubbert, Thomas Dalibor, Jürgen Parisi, Jörg Palm
Publikováno v:
physica status solidi (a). 212:336-347
Using device simulations, we investigate the change of the temperature behavior of Cu(In,Ga)(Se,S)2 solar cells. Our goal is to understand the behavior of the performance ratio (PR), normalized energy yield (Y), and the temperature coefficient of the
Autor:
Xavier Fontané, Ingo Riedel, Victor Izquierdo-Roca, Alejandro Pérez-Rodríguez, Jürgen Parisi, Folker Zutz, Christine Chory, Martin Knipper
Publikováno v:
physica status solidi (a). 212:329-335
Sulfur-based kesterite Cu2ZnSnS4 (CZTS) nanoparticles (NPs) have been produced in a wet-chemical synthesis route which provides high yields of CZTS-NPs per synthesis cycle. These NPs can be used as raw material for electronic inks, which can be proce
Autor:
Christian Schubbert, Ingo Riedel, Michael Richter, Jörg Palm, Thomas Dalibor, Jürgen Parisi, Patrick Eraerds
Publikováno v:
physica status solidi (a). 212:298-306
Typical features of sequentially processed Cu(In1−xGax)(Sey−1Sy)2 (CIGSSe) thin film solar cells such as roughness at particular interfaces and free absorber volume (voids) might influence the device characteristics significantly. We investigated
Publikováno v:
Physica B: Condensed Matter. 439:9-13
The successful definition and verification of a one-dimensional device simulation baseline for sequentially processed Mo / Cu ( In 1 − x Ga x ) ( Se 1 − y S y ) 2 / CdS / i - ZnO / ZnO : Al thin film solar cells is presented. The appropriate mode