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pro vyhledávání: '"Ingo Röver"'
Publikováno v:
The Journal of Physical Chemistry C. 118:2044-2051
In semiconductor and photovoltaic industries numerous process steps deal with etching and silicon surface modification. The present study focuses on the reactivity of HF-H2O2-based mixtures toward silicon surfaces in a wide range of concentrations. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34b10eace0da512b61897472a08ab10f
https://doi.org/10.1021/jp4105757
https://doi.org/10.1021/jp4105757
