Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Ingmar Ratschinski"'
Autor:
Soundarya Nagarajan, Daniel Hiller, Ingmar Ratschinski, Dirk König, Sean C. Smith, Thomas Mikolajick, Jens Trommer
Publikováno v:
Advanced Materials Interfaces, Vol 11, Iss 1, Pp n/a-n/a (2024)
Abstract Doping silicon on the nanoscale by the intentional introduction of impurities into the intrinsic semiconductor suffers from effects such as dopant deactivation, random dopant fluctuations, out‐diffusion, and mobility degradation. This pape
Externí odkaz:
https://doaj.org/article/cc872ae237864610802310a42741a084
Autor:
Ingmar Ratschinski, Soundarya Nagarajan, Jens Trommer, Andrei Luferau, Muhammad Bilal Khan, Artur Erbe, Yordan M. Georgiev, Thomas Mikolajick, Sean C. Smith, Dirk König, Daniel Hiller
Publikováno v:
physica status solidi (a).
Publikováno v:
Applied Surface Science. 368:341-347
In this study we investigated the correlation between microstructure and residual strain relaxation in nanocrystalline Pt films with a thickness of about 20 nm produced by different deposition techniques: magnetron sputtering and ion beam sputtering.