Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Ingi Kim"'
Publikováno v:
Journal of Mechanical Science and Technology. 35:1923-1933
In this paper, to help reduce the squeal noise produced during the braking of urban railway vehicles, the shape of the disc brake pad was investigated to relieve contact stress. To analyze the disc brake system to identify the source of the squeal no
Publikováno v:
Metrology, Inspection, and Process Control XXXVI.
Autor:
Maxim Ryabko, Vladimir O. Bessonov, Anton Medvedev, Sangwoo Bae, Alexander S. Shorokhov, Hosun Yoo, Taehyun Kim, Joo Won-Don, Kyunghun Han, Stanislav Polonsky, Ingi Kim, Boris I. Afinogenov, Minhwan Seo, Vladimir N. Mantsevich, I. M. Antropov, Andrey A. Fedyanin, Nikita R. Filatov, Jeang Eun-Hee, Anton N. Sofronov, Natalia Sergeevna Maslova
Publikováno v:
Optics letters. 46(13)
We report the experimental observation of the UV-visible upconverted luminescence of bulk silicon under pulsed infrared excitation. We demonstrate that non-stationary distribution of excited carriers leads to the emission at spectral bands never to o
Autor:
Boris I. Afinogenov, Seulgi Lee, Lee Sang-Min, Sangwoo Bae, Nikita R. Filatov, Anton N. Sofronov, Minhwan Seo, Maxim Ryabko, Anton Medvedev, Vladimir O. Bessonov, Jeang Eun-Hee, Taehyun Kim, Aleksander S. Shorokhov, I. M. Antropov, Akinori Ohkubo, Ingi Kim, Joo Won-Don
Publikováno v:
Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVII.
We demonstrate the broadband visible luminescence from bulk crystalline silicon and silicon nanoparticles sized 100- 30 nm under near-infrared excitation. We show that the luminescence spectrum has two distinct peaks. The first being centered at 550
Autor:
Seulgi Lee, I. M. Antropov, Sangwoo Bae, Akinori Ohkubo, Joo Won-Don, Aleksandr Shorokhov, Hosun Yoo, Anton Medvedev, Kyunghun Han, Taehyun Kim, Minhwan Seo, Boris I. Afinogenov, Jeang Eun-Hee, Vladimir O. Bessonov, Maksim Riabko, Lee Sang-Min, Anton N. Sofronov, Ingi Kim
Publikováno v:
Nonlinear Optics and its Applications 2020.
Detection of a single nanoparticle on a bare silicon wafer has been a challenge in the semiconductor industry for decades. Currently, the most successful and widely used technique is dark-field microscopy. However, it is not capable of detecting sing
Publikováno v:
2019 Compound Semiconductor Week (CSW).
Multi-band valley-protected topological edge states is numerically demonstrated in GaAs-based phononic crystal (PnC) slabs. Two Dirac degeneracies at different frequencies are lifted by rotation of triangular holes in the unit cells breaking the mirr
Valley, as a new degree of freedom, raises the valleytronics in fundamental and applied science. The elastic analogs of valley states have been proposed by mimicking the symmetrical structure of either two-dimensional materials or photonic valley cry
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7753fb3541cb2c05611499cca513c5fc
http://arxiv.org/abs/1904.11057
http://arxiv.org/abs/1904.11057
We report the design of GaAs-based monolithic valley phononic crystals (VPnCs) with multiple complete phononic bandgaps, which support simultaneous valley-protected edge states with different symmetries in the gigahertz (GHz) range. Rotation of trian
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e2a71dfa565d516e82138affb52c2ad6
http://arxiv.org/abs/1901.01407
http://arxiv.org/abs/1901.01407
Publikováno v:
2017 22nd Microoptics Conference (MOC).
We measure the spatial distribution of a topologically protected elastic modes in a silica 1D phononic crystal (PnC) by using the photoelasticity imaging technique. The strong localization of the topological elastic mode at the interface of two-joine
We report the design of silica-based 1D phononic crystals (PnCs) with topologically distinct complete phononic bandgaps (PnBGs) and the observation of a topologically protected state of elastic waves at their interface. By choosing different structur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a00031ed9a37e0b55c93ca2242426000
http://arxiv.org/abs/1710.05471
http://arxiv.org/abs/1710.05471