Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Inge M. Peters"'
Autor:
Yves Kessener, Ruud Vullers, Olivier Tousignant, James J. Miller, Willem H. Maes, Inge M. Peters
Publikováno v:
Medical Imaging 2020: Physics of Medical Imaging.
X-ray detectors increasingly utilize active pixel CMOS instead of amorphous silicon technology because of its superior noise, pixel lag, readout speed and offset stability. We already demonstrated [1] that adding an a additional pixel capacitance to
Publikováno v:
SPIE Proceedings.
Digital Breast Tomosynthesis (DBT) requires excellent image quality in a dynamic mode at very low dose levels while Full Field Digital Mammography (FFDM) is a static imaging modality that requires high saturation dose levels. These opposing requireme
Publikováno v:
IEEE Transactions on Electron Devices. 56:2462-2467
Very low dark current in charge-coupled-device image sensors is established by means of multipinned phase combined with vertical antiblooming, so-called all-gates pinning. Hereby, dark-current generation at the surface and diffusion from the bulk are
Publikováno v:
SPIE Proceedings.
Compared to published amorphous-silicon (TFT) based X-ray detectors, crystalline silicon CMOS-based active-pixel detectors exploit the benefits of low noise, high speed, on-chip integration and featuring offered by CMOS technology. This presentation
Autor:
Alexander S. Zyazin, Inge M. Peters
Publikováno v:
SPIE Proceedings.
We have developed a simulation tool for modeling the performance of CMOS-based medical x-ray detectors, based on the Monte Carlo toolkit GEANT4. Following the Fujita-Lubberts-Swank approach recently reported by Star-Lack et al., we calculate modulati
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 565:148-156
This paper gives a review of the performance of charge-coupled device (CCD) imagers for use in consumer, professional and scientific applications. An overview of recent developments and the current state-of-the-art are presented. An extensive list of
Autor:
Marcel Raspe, Ben Schelen, Frank Polderdijk, Bert van Geest, Jan T. Bosiers, Rene Leenen, Rein van den Oever, Harry van Kuijk, Jan Geert Sander de Jong, Qiaole Zhao, Karel Stoop, Ian T. Young, Raymond N. Schouten, Inge M. Peters, Kees Jalink
Publikováno v:
Journal of Biomedical Optics, 17(12)2012
We have built an all-solid-state camera that is directly modulated at the pixel level for frequency-domain fluorescence lifetime imaging microscopy (FLIM) measurements. This novel camera eliminates the need for an image intensifier through the use of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2bd3fb88b13fee66f98c3ffc8f7be707
http://resolver.tudelft.nl/uuid:eca46474-256a-4ffe-a9f5-45e293ad9f8f
http://resolver.tudelft.nl/uuid:eca46474-256a-4ffe-a9f5-45e293ad9f8f
Autor:
Inge M. Peters, W. T. F. M. De Laat, E.W. Bogaart, J.T. Bosiers, E. J. P. Manoury, R. Frost, W. Klaassens, A. C. M. Kleimann, Cees Draijer
Publikováno v:
Digital Photography
A new-generation full-frame 36x48 mm 2 48Mp CCD image sensor with vertical anti-blooming for professional digital still camera applications is developed by means of the so-called building block concept. The 48Mp devices are formed by stitching 1kx1k
Autor:
A.C. Kleimann, H. van Kuijk, E.W. Bogaart, J.T. Bosiers, M. Koyuncu, Wilco Klaassens, E. J. P. Manoury, Inge M. Peters, L.H. Meessen, Holger Stoldt
Publikováno v:
2008 IEEE International Electron Devices Meeting.
A 48 M-pixel, 6 k times 8 k, 36 times 48 mm2 full-frame CCD imager was developed for professional digital SLR cameras and digital camera backs. Compared to the previous generation CCD, the pixel area was reduced by 30% from 7.2times7.2 mum2 to 6.0 ti
Publikováno v:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..
CCD imagers for professional digital still camera (DSC) applications require very low dark current levels to obtain excellent image quality at long exposure times. This paper presents the limits of charge pumping for dark current reduction in very-la