Zobrazeno 1 - 10
of 254
pro vyhledávání: '"Inge, Asselberghs"'
Autor:
Ramamoorthy Ramesh, Sayeef Salahuddin, Suman Datta, Carlos H. Diaz, Dmitri E. Nikonov, Ian A. Young, Donhee Ham, Meng-Fan Chang, Win-San Khwa, Ashwin Sanjay Lele, Christian Binek, Yen-Lin Huang, Yuan-Chen Sun, Ying-Hao Chu, Bhagwati Prasad, Michael Hoffmann, Jia-Mian Hu, Zhi (Jackie) Yao, Laurent Bellaiche, Peng Wu, Jun Cai, Joerg Appenzeller, Supriyo Datta, Kerem Y. Camsari, Jaesuk Kwon, Jean Anne C. Incorvia, Inge Asselberghs, Florin Ciubotaru, Sebastien Couet, Christoph Adelmann, Yi Zheng, Aaron M. Lindenberg, Paul G. Evans, Peter Ercius, Iuliana P. Radu
Publikováno v:
APL Materials, Vol 12, Iss 9, Pp 099201-099201-73 (2024)
Externí odkaz:
https://doaj.org/article/b2b9e2e5da1a4c99bd0b8ddeab09dc2b
Autor:
Goutham Arutchelvan, Quentin Smets, Devin Verreck, Zubair Ahmed, Abhinav Gaur, Surajit Sutar, Julien Jussot, Benjamin Groven, Marc Heyns, Dennis Lin, Inge Asselberghs, Iuliana Radu
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-11 (2021)
Abstract Two-dimensional semiconducting materials are considered as ideal candidates for ultimate device scaling. However, a systematic study on the performance and variability impact of scaling the different device dimensions is still lacking. Here
Externí odkaz:
https://doaj.org/article/f132e126bb2d4a5abc877181c5dbd890
Autor:
Daniil Marinov, Jean-François de Marneffe, Quentin Smets, Goutham Arutchelvan, Kristof M. Bal, Ekaterina Voronina, Tatyana Rakhimova, Yuri Mankelevich, Salim El Kazzi, Ankit Nalin Mehta, Pieter-Jan Wyndaele, Markus Hartmut Heyne, Jianran Zhang, Patrick C. With, Sreetama Banerjee, Erik C. Neyts, Inge Asselberghs, Dennis Lin, Stefan De Gendt
Publikováno v:
npj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-10 (2021)
Abstract The cleaning of two-dimensional (2D) materials is an essential step in the fabrication of future devices, leveraging their unique physical, optical, and chemical properties. Part of these emerging 2D materials are transition metal dichalcoge
Externí odkaz:
https://doaj.org/article/f7264bb1bbb04927a645eab375c746fc
Autor:
Steven Brems, Souvik Ghosh, Quentin Smets, Marie-Emmanuelle Boulon, Andries Boelen, Koen Kennes, Hung-Chieh Tsai, Francois Chancerel, Clement Merckling, Pieter-Jan Wyndaele, Jean-Francois De Marneffe, Tom Schram, Pawan Kumar, Stefanie Sergeant, Thomas Nuytten, Stefan De Gendt, Henry Medina Silva, Benjamin Groven, Pierre Morin, Gouri Sankar Kar, César Lockhart De la Rosa, Didit Yudistira, Joris Van Campenhout, Inge Asselberghs, Alain Phommahaxay
Publikováno v:
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bbbbfb500f3632e1fef09b85aeb6972
https://doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134381
https://doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134381
Autor:
Devin Verreck, Piet Wambacq, Maarten Van De Put, Zubair Ahmed, Quentin Smets, Aryan Afzalian, Rutger Duflou, Xiangyu Wu, Gioele Mirabelli, Rongmei Chen, Inge Asselberghs, Gouri Sankar Kar
Publikováno v:
2023 IEEE International Solid- State Circuits Conference (ISSCC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a37a4fc5bcba31f64a90a4579f22ec1
https://doi.org/10.1109/isscc42615.2023.10067567
https://doi.org/10.1109/isscc42615.2023.10067567
Autor:
Saptarshi Das, Thomas D. Anthopoulos, Tibor Grasser, Connor J. McClellan, Uygar E. Avci, Penumatcha Ashish Verma, Lain-Jong Li, Aaron D. Franklin, Wenjuan Zhu, Theresia Knobloch, Rajendra Singh, Joerg Appenzeller, Amritanand Sebastian, Navakanta Bhat, Eric Pop, Inge Asselberghs, Zhihong Chen, Yury Yu. Illarionov
Publikováno v:
Nature Electronics. 4:786-799
Field-effect transistors based on two-dimensional (2D) materials have the potential to be used in very large-scale integration (VLSI) technology, but whether they can be used at the front end of line or at the back end of line through monolithic or h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2efd31326d4bd302880953d648ed9a1c
https://doi.org/10.1038/s41928-021-00670-1
https://doi.org/10.1038/s41928-021-00670-1
Autor:
Zubair Ahmed, Surajit Sutar, Abhinav Gaur, Iuliana Radu, Dennis Lin, Inge Asselberghs, Marc Heyns, Benjamin Groven, Quentin Smets, Devin Verreck, Goutham Arutchelvan, J. Jussot
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-11 (2021)
Scientific Reports
Scientific Reports
Two-dimensional semiconducting materials are considered as ideal candidates for ultimate device scaling. However, a systematic study on the performance and variability impact of scaling the different device dimensions is still lacking. Here we invest
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::57a63aa4e8848d98d6e30acd294c5d67
https://doaj.org/article/f132e126bb2d4a5abc877181c5dbd890
https://doaj.org/article/f132e126bb2d4a5abc877181c5dbd890
Autor:
Yuanyuan Shi, Benjamin Groven, Quentin Smets, Surajit Sutar, Sreetama Banerjee, Henry Medina, Xiangyu Wu, Cedric Huyghebaert, Steven Brems, Dennis Lin, Pierre Morin, Matty Caymax, Inge Asselberghs, Iuliana Radu
Publikováno v:
IEEE International Electron Devices Meeting (IEDM)
2021 IEEE International Electron Devices Meeting (IEDM)
2021 IEEE International Electron Devices Meeting (IEDM)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f037e1e5142464a191d8844629d06952
https://doi.org/10.1109/iedm19574.2021.9720676
https://doi.org/10.1109/iedm19574.2021.9720676
Autor:
Quentin Smets, Tom Schram, Devin Verreck, Daire Cott, Benjamin Groven, Zubair Ahmed, Ben Kaczer, Jerome Mitard, Xiangyu Wu, Souvik Kundu, Hans Mertens, Dunja Radisic, Arame Thiam, Waikin Li, Emmanuel Dupuy, Zheng Tao, Kevin Vandersmissen, Thibaut Maurice, Dennis Lin, Pierre Morin, Inge Asselberghs, Iuliana Radu
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::918faa104e7bdd0bf709a2f04f69ed2d
https://doi.org/10.1109/iedm19574.2021.9720517
https://doi.org/10.1109/iedm19574.2021.9720517
Autor:
Pierre Morin, Benjamin Groven, Henry Medina, Yuanyuan Shi, Vladislav Voronenkov, Iryna Kandybka, Annelies Delabie, Dries Vranckx, Brecht De Vos, Sebastiaan Nijs, Thibaut Maurice, Daire Cott, Sreetama Banerjee, Quentin Smets, Tom Schram, Xiangyu Wu, Dennis Lin, Inge Asselberghs
Publikováno v:
ECS Meeting Abstracts. :822-822
Two dimensional ultrathin layers are considered promising materials to bring new functionalities in nanotechnologies and candidate to replace 3D materials in existing applications. Among this last category, transition metal dichalcogenides (TMDC) lik
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b56b8b5b54a5481b8cc964ca60ab3e8
https://doi.org/10.1149/ma2022-0215822mtgabs
https://doi.org/10.1149/ma2022-0215822mtgabs