Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Ing Jyi Huang"'
Autor:
Wen Tai Lu, Po Ching Lin, Tiao Yuan Huang, Ing Jyi Huang, Ming Jui Yang, Chao-Hsin Chien, Peer Lehnen
Publikováno v:
Applied Physics Letters. 85:3525-3527
The characteristics of charge trapping during constant voltage stress in an n-type metal–oxide–semiconductor capacitor with HfO2∕SiO2 gate stack and TiN gate electrode were studied. We found that the dominant charge trapping mechanism in the hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac184edc43cedeb7203bdb6202775926
https://doi.org/10.1063/1.1808228
https://doi.org/10.1063/1.1808228
Autor:
Wen-Tai Lu, Po-Ching Lin, Tiao-Yuan Huang, Chao-Hsin Chien, Ming-Jui Yang, Ing-Jyi Huang, Lehnen, Peer
Publikováno v:
Applied Physics Letters; 10/18/2004, Vol. 85 Issue 16, p3525-3527, 3p, 1 Diagram, 3 Graphs