Zobrazeno 1 - 10
of 57
pro vyhledávání: '"Ines Pietzonka"'
Autor:
Kęstutis Jarašiūnas, Hans-Juergen Lugauer, Saulius Miasojedovas, Ines Pietzonka, R. Tomašiūnas, K. Nomeika, Ramūnas Aleksiejūnas, Martin Strassburg
Publikováno v:
Journal of Luminescence. 188:301-306
Localization of charge carriers is of crucial importance in InGaN light emitting devices since it governs carrier transport and ensures high radiative efficiency. In this work, we observe the dynamics of carrier localization from an untypical redshif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97b935604d346faa216ad36df66a0482
https://doi.org/10.1016/j.jlumin.2017.04.055
https://doi.org/10.1016/j.jlumin.2017.04.055
Autor:
Saulius Miasojedovas, Ines Pietzonka, R. Kudžma, Martin Strassburg, R. Tomašiūnas, I. Reklaitis, Pranciškus Vitta, Artūras Žukauskas
Publikováno v:
Journal of Electronic Materials. 45:3290-3299
An extended study of charge-carrier localization and delocalization in blue and green InGaN light-emitting diode (LED) test structures has been performed. Using the frequency-domain lifetime measurement (FDLM) technique based on direct harmonic modul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ad86c5584cc2fbc37d824b0a0335110
https://doi.org/10.1007/s11664-016-4557-7
https://doi.org/10.1007/s11664-016-4557-7
Autor:
Thorsten Mehrtens, Andreas Rosenauer, Josef Zweck, Ines Pietzonka, Ralph Schregle, Martin Strassburg, Matthias Lohr, Michael Jetter, Knut Müller-Caspary, Clemens Wächter
Publikováno v:
physica status solidi (b). 253:140-144
Piezoelectric and spontaneous polarization play an essential role in GaN-based devices. InGaN quantum wells (QWs) in GaN host material, especially grown along the polar c-direction, exhibit strong internal fields in the QW region due to the indium-in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e24d5f05b5bbd3c3ee17ff44091011c
https://doi.org/10.1002/pssb.201552288
https://doi.org/10.1002/pssb.201552288
Autor:
Tobias Niebling, Hans-Jürgen Lugauer, Andrei Vescan, Ines Pietzonka, Holger Koch, Holger Kalisch, Dominik Scholz
Publikováno v:
physica status solidi (a). 212:2053-2058
Two chip concepts based on thin-film technology are presented and compared regarding their suitability for concentrating photovoltaic applications. The main difference is given by the n-contact design: the first concept relies on a metal grid (MG) wh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b5ede75ba8616dd2068199068038e81
https://doi.org/10.1002/pssa.201532064
https://doi.org/10.1002/pssa.201532064
Autor:
Martin Strassburg, Holger Koch, Bastian Galler, Hans-Juergen Lugauer, Holger Kalisch, Andrei Vescan, Ines Pietzonka
Publikováno v:
Journal of Crystal Growth. 414:42-48
A comprehensive study on the effect of antimony on growth mode and crystal properties of thick InGaN layers grown by metal-organic vapor phase epitaxy is presented. Two growth regimes are identified by atomic force microscopy: while already minor ant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36ea248f99dd92a734d6942832658918
https://doi.org/10.1016/j.jcrysgro.2014.10.041
https://doi.org/10.1016/j.jcrysgro.2014.10.041
Autor:
I. E. Titkov, Amit Yadav, V. L. Zerova, Edik U. Rafailov, Ines Pietzonka, Martin Strassburg, Hans-Juergen Lugauer, Modestas Zulonas, Bastian Galler, Sergey Yu. Karpov
Publikováno v:
IEEE Journal of Quantum Electronics. 50:911-920
Internal quantum efficiency (IQE) of a blue high-brightness InGaN/GaN light-emitting diode (LED) was evaluated from the external quantum efficiency measured as a function of current at various temperatures ranged between 13 and 440 K. Processing the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::62c3d082863321e3697afdef168ed896
https://doi.org/10.1109/jqe.2014.2359958
https://doi.org/10.1109/jqe.2014.2359958
Publikováno v:
IEEE Journal of Quantum Electronics. 49:380-385
In this paper, we measure and analyze the pump power and wavelength dependent gain of an optically pumped infrared 1050-nm vertical external-cavity surface-emitting laser vertical external-cavity surface-emitting laser (VECSEL) developed for an appli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d3a15ab44038ad43bc7c208dea45c04f
https://doi.org/10.1109/jqe.2013.2239958
https://doi.org/10.1109/jqe.2013.2239958
Autor:
K.K. Soboleva, I. E. Titkov, G. S. Sokolovskii, Martin Strassburg, Ines Pietzonka, Vladislav V. Dudelev, Sergey Yu. Karpov, Amit Yadav, Hans-Juergen Lugauer, Edik U. Rafailov
Publikováno v:
SPIE Proceedings.
Efficiency of commercial 620 nm InAlGaP Golden Dragon-cased high-power LEDs has been studied under extremely high pump current density up to 4.5 kA/cm2 and pulse duration from microsecond down to sub-nanosecond range. No efficiency decrease and negli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ee62f09388b80ccb8bba3093b6a9ac01
https://doi.org/10.1117/12.2213344
https://doi.org/10.1117/12.2213344
Autor:
Michael Binder, Hans-Jürgen Lugauer, Ines Pietzonka, Bastian Galler, Dominique Bougeard, Anna Nirschl, Roland Zeisel, Marina Schmid, Matthias Sabathil
Recent experimental investigations on the reduction of internal quantum efficiency with increasing current density in (AlInGa)N quantum well structures show that Auger recombination is a significant contributor to the so-called "droop" phenomenon. Us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::10ed4bc8913b784291008b6c83cb813d
https://epub.uni-regensburg.de/33365/
https://epub.uni-regensburg.de/33365/
Autor:
Ines Pietzonka, Adrian Stefan Avramescu, Teresa Lermer, Jens Müller, Uwe Strauss, Georg Brüderl, Stephan Lutgen
Publikováno v:
physica status solidi (a). 208:1199-1202
The origin of indium fluctuations in indium-rich quantum wells (QWs) is of high interest for direct green laser diodes. We present the correlation of morphological features such as macrosteps investigated by AFM measurements and wavelength fluctuatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86da36043ed8a3754ec90ee6d2967b95
https://doi.org/10.1002/pssa.201000695
https://doi.org/10.1002/pssa.201000695