Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Indrasen Bhattacharya"'
Autor:
Christopher M. Spadaccini, Maxim Shusteff, Hossein Heidari, Brett Kelly, Indrasen Bhattacharya, Hayden Taylor
Publikováno v:
Science. 363:1075-1079
Fabrication goes for a quick spin Most 3D printing techniques involve adding material layer by layer. This sets some limitations on the types of applications for which 3D printing is suitable, such as printing around a preexisting object. Kelly et al
Publikováno v:
Additive Manufacturing. 47:102299
Volumetric additive manufacturing (VAM) promises a significantly improved regime of capabilities for 3D printing. Computed Axial Lithography (CAL) is a photopolymerization-based tomographic VAM process which constructs objects by projecting systemati
Autor:
Connie J. Chang-Hasnain, Fanglu Lu, Thai-Truong D. Tran, Hao Sun, Indrasen Bhattacharya, Gilliard N. Malheiros-Silveira
Publikováno v:
ACS Photonics. 4:1021-1025
We propose a platform based on III−V compound semiconductor nanopillars monolithically integrated with silicon photonics. Nanopillars were grown in a process free of metal catalysts onto silicon at low temperature, and a bottom-up process was appli
Autor:
Kar Wei Ng, Gilliard N. Malheiros-Silveira, Indrasen Bhattacharya, Saniya Deshpande, Willi Mantei, Fabian Schuster, Connie J. Chang-Hasnain, Kevin T. Cook
Publikováno v:
ACS Photonics. 4:695-702
Highly compact III–V compound semiconductor active nanophotonic devices integrated with silicon are important for future low power optical interconnects. One approach toward realizing heterogeneous integration and miniaturization of photonic device
Publikováno v:
Microfluidics, BioMEMS, and Medical Microsystems XVII.
Soft lithography provides a convenient technique for prototyping miniaturized fluidic systems. However, 3D-printing techniques offer shorter lead times and greater three-dimensional design freedom, as well as circumventing the manual alignment and in
Computed axial lithography: volumetric 3D printing of arbitrary geometries (Conference Presentation)
Publikováno v:
Image Sensing Technologies: Materials, Devices, Systems, and Applications V.
Lower-dimensional photopolymerization based additive manufacturing techniques have several drawbacks that currently limit the applicability and scope of 3D printing, including: topological constraints, the requirement for numerous complex support str
Autor:
Wai Son Ko, Stephen Adair Gerke, Indrasen Bhattacharya, Connie J. Chang-Hasnain, Kar Wei Ng, Thai-Truong D. Tran
Publikováno v:
Scientific Reports
Highly sensitive and fast photodetectors can enable low power, high bandwidth on-chip optical interconnects for silicon integrated electronics. III-V compound semiconductor direct-bandgap materials with high absorption coefficients are particularly p
Autor:
Kevin T. Cook, Gilliard Nardel Malheiros Silveira, Connie J. Chang-Hasnain, Indrasen Bhattacharya, Willi Mantei, Saniya Deshpande
Publikováno v:
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS).
We demonstrate catalyst-free metal organic chemical vapor deposition (MOCVD) growth of position-controlled InP nanopillars on Si substrates for the first time. The nanopillars were grown at a low growth temperature of 460°C, compatible with CMOS bac
Autor:
Indrasen Bhattacharya, Saniya Deshpande, Connie J. Chang-Hasnain, Gilliard N. Malheiros-Silveira
Publikováno v:
Scopus-Elsevier
We have grown and fabricated InGaAs active region, InP clad nanopillar diodes at deterministic positions on silicon using selective area epitaxy. Room temperature radiative dominant electroluminescence at 1460 nm wavelength is reported from these dev
Autor:
Hao Sun, Connie J. Chang-Hasnain, Thai-Truong D. Tran, Kar Wei Ng, Wai Son Ko, Indrasen Bhattacharya
Publikováno v:
Nano letters. 15(8)
Low cost, high efficiency photovoltaic can help accelerate the adoption of solar energy. Using tapered indium phosphide nanopillars grown on a silicon substrate, we demonstrate a single nanopillar photovoltaic exhibiting illumination angle insensitiv