Zobrazeno 1 - 10
of 1 411
pro vyhledávání: '"Indium tin oxide (ITO)"'
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-10 (2024)
Abstract In this paper, a novel silicon-on-chip integrated 4 × 1 wavelength division multiplexing (WDM) multiplexer has been developed. This is the first time that the multiplexer design incorporates arrayed electro-optical modulators with crosstalk
Externí odkaz:
https://doaj.org/article/bd755b025277480babd17b9d483382c8
Publikováno v:
Light: Advanced Manufacturing, Vol 4, Iss 4, Pp 420-436 (2024)
By taking advantage of the absence of diffraction limit restrictions in plasmonic structures, strong modal confinement is made possible, paving the way for improved optical processes and miniaturized photonic circuit integration. Indium tin oxide (IT
Externí odkaz:
https://doaj.org/article/6f91a0d1ca7d491aab82a8eabe0caa4f
Publikováno v:
IEEE Access, Vol 12, Pp 141878-141889 (2024)
This paper presents a wide incident angle, wideband, and polarization-insensitive unit cell frequency-selective surface (FSS) on single- and double-glazing glass. The 5G signal losses due to the shielding of building materials lead to high penetratio
Externí odkaz:
https://doaj.org/article/1c6d76d12b5f4982b56c337888eb373d
Publikováno v:
Micromachines, Vol 15, Iss 11, p 1339 (2024)
Solar cell (SC) technologies, which are essential in the transition toward sustainable energy, utilize photovoltaic cells to convert solar energy into electricity. Of the available technologies, heterojunction with intrinsic thin-layer (HIT) solar ce
Externí odkaz:
https://doaj.org/article/327e4385fdb9481290a4342e8f6cced8
Autor:
Chibuzo Onwukaeme, Han-Youl Ryu
Publikováno v:
Nanomaterials, Vol 14, Iss 17, p 1409 (2024)
The efficiency of current GaN-based blue laser diodes (LDs) is limited by the high resistance of a thick p-AlGaN cladding layer. To reduce the operation voltage of InGaN blue LDs, we investigated optimum LD structures with an indium tin oxide (ITO) p
Externí odkaz:
https://doaj.org/article/6a0d45fb9f0c42d8b5e07e40e62b03ba
Autor:
Vinooth Rajendran, Anil Prathuru, Carlos Fernandez, Dhavamani Sujatha, Subhendu K. Panda, Nadimul Haque Faisal
Publikováno v:
Engineering Reports, Vol 6, Iss 3, Pp n/a-n/a (2024)
Abstract This review aims to present a critical overview of indium tin oxide (ITO) thin film preparation methods, structure–property relationship, and its humidity sensing. A range of passive and active humidity sensors with thin films (based on me
Externí odkaz:
https://doaj.org/article/662937ad1c074b00ac87c0df535663a8
Self‐Powered e‐Skin Based on Integrated Flexible Organic Photovoltaics and Transparent Touch Sensors
Autor:
Nitheesh M. Nair, Dhayalan Shakthivel, Kumar M. Panidhara, Varun Adiga, Praveen C Ramamurthy, Ravinder Dahiya
Publikováno v:
Advanced Intelligent Systems, Vol 5, Iss 10, Pp n/a-n/a (2023)
There is a growing interest in the large area, lightweight, low‐power electronic skin (e‐Skin), consisting of a multitude of sensors over conformable surfaces. The use of multifunctional sensors is always challenging, especially when their energy
Externí odkaz:
https://doaj.org/article/6fb02dd67f6a4bb0bf82d6eb45bf256c
High Thermal Performance Ultraviolet (368 nm) AlGaN-Based Flip-Chip LEDs with an Optimized Structure
Autor:
Guanlang Sun, Taige Dong, Aixin Luo, Jiachen Yang, Ying Dong, Guangda Du, Zekai Hong, Chuyu Qin, Bingfeng Fan
Publikováno v:
Nanomaterials, Vol 14, Iss 3, p 267 (2024)
In this study, we have fabricated a 368 nm LED with an epitaxial Indium Tin Oxide (ITO) contact layer. We analyze the thermal performance of the flip-chip LED with a symmetric electrode and metal reflective layer, applying ANSYS to build a coupled el
Externí odkaz:
https://doaj.org/article/422150b669174cebb1ba4842da58baf1
Autor:
Zhanfei Han, Xiangdong Li, Hongyue Wang, Yuebo Liu, Weitao Yang, Zesheng Lv, Meng Wang, Shuzhen You, Jincheng Zhang, Yue Hao
Publikováno v:
Micromachines, Vol 15, Iss 1, p 156 (2024)
This work presents highly responsive gate-controlled p-GaN/AlGaN/GaN ultraviolet photodetectors (UVPDs) on Si substrates with a high-transmittance ITO gate. The two-dimensional electron gas (2DEG) in the quantum well of the polarized AlGaN/GaN hetero
Externí odkaz:
https://doaj.org/article/7b55b01bc6b44340a22ab07378203714
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