Zobrazeno 1 - 10
of 58
pro vyhledávání: '"Indium Arsenides"'
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures
Physica E: Low-dimensional Systems and Nanostructures, Elsevier, 2008, 40 (3), pp.489-493. ⟨10.1016/j.physe.2007.07.003⟩
Physica E: Low-dimensional Systems and Nanostructures, Elsevier, 2008, 40 (3), pp.489-493. ⟨10.1016/j.physe.2007.07.003⟩
International audience; Dilute-nitride InAsN/GaSb/InAsN "W" laser structure is theoretically investigated and compared with similar nitride-free InAs/GaSb/InAs "W" structure. The two laser diodes, to be grown on (001) InAs substrate, are designed to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9571d56f3c35d67bc9ec5354f068ede9
https://doi.org/10.1016/j.physe.2007.07.003
https://doi.org/10.1016/j.physe.2007.07.003
Autor:
S. R. Jin, C. N. Ahmad, Yves Rouillard, Abdelmajid Salhi, K. O'Brien, B. N. Murdin, Stephen J. Sweeney, Alfred R. Adams, A. Joullié
Publikováno v:
physica status solidi (b)
physica status solidi (b), Wiley, 2007, 244 (1), pp.203-207. ⟨10.1002/pssb.200672573⟩
physica status solidi (b), Wiley, 2007, 244 (1), pp.203-207. ⟨10.1002/pssb.200672573⟩
International audience; Hydrostatic pressure and spontaneous emission techniques have been used to examine the important recombination mechanisms in type-I GaInAsSb/GaSb quantum well lasers. High pressure results indicate that Auger recombination dom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a8f0995d09186853a481d97286708045
https://doi.org/10.1002/pssb.200672573
https://doi.org/10.1002/pssb.200672573
Publikováno v:
Journal of Applied Physics. 79:2640-2648
We have carried out a detailed structural and optical characterization of Ga0.47In0.53As/InP multiple quantum wells grown by chemical beam epitaxy using a well-defined sequence of growth interruption times between successive layers. These growth inte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6f708717abe7b379cc7e70a1c520b4fa
https://doi.org/10.1063/1.361134
https://doi.org/10.1063/1.361134
Autor:
C. M. Hurd, W. R. McKinnon
Publikováno v:
Journal of Applied Physics. 79:1578-1582
A semiconductor with a high resistivity due to a deep trap is called a semi-insulator. A semi-insulator does not always behave like a normal insulator because of so-called bias voltage propagation, which arises from space charge in the deep trap. Thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1ad788c75a0d796f5cb9302ce9ed9d67
https://doi.org/10.1063/1.361001
https://doi.org/10.1063/1.361001
Autor:
W. R. McKinnon, C. M. Hurd
Publikováno v:
Journal of Applied Physics. 78:5756-5764
A calculation is described of the transient pulse response of a planar metal-semiconductor-metal photodetector consisting of Schottky contacts made to an active layer of semi-insulating InGaAs:Fe that is supported on an InP:Fe substrate. The simulati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::41c823a0bbc1ef1f5b7e8f75d7e76690
https://doi.org/10.1063/1.359638
https://doi.org/10.1063/1.359638
Autor:
Wei, Jean W.
Publikováno v:
Theses and Dissertations
A new method to determine semiconductor bandgap energy directly from the easily measured transmission spectra was developed. The method was verified using many binary semiconductors with known properties and utilized to determine the unknown ternary
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=issn23813652::b111ab04805a2d110a9ba8e220e8421d
https://scholar.afit.edu/etd/1479
https://scholar.afit.edu/etd/1479
Autor:
Estelle Homeyer, Jacky Even, Mariangela Gioannini, Rozenn Piron, Ivo Montrosset, K. Veselinov, Frédéric Grillot, Slimane Loualiche
Quantum dot (QD) lasers exhibit many useful properties such as low threshold current, temperature and feedback insensitivity, chirpless behavior, and low linewidth enhancement factor. The aim of this paper is to investigate the lasing spectra behavio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4f21c2e03a95294f0e177224d827d40a
http://hdl.handle.net/11583/1955038
http://hdl.handle.net/11583/1955038
Autor:
T. Jones, Ian V. Mitchell, F. R. Shepherd, N. Puetz, R. D. Goldberg, Sylvain Charbonneau, Yan Feng, J.‐P. Noël, Philip J. Poole, C.J. Miner, K. Fox, D. Melville, Emil S. Koteles
Publikováno v:
Applied Physics Letters. 69:3516-3518
InGaAsP/InP quantum well (QW) ridge waveguide lasers emitting nominally at 1310 nm have been ‘‘blue-shifted’’ selectively (as much as 70 nm) on a full 50-mm-diameter wafer after growth. P + ion implantation at 1 MeV, 200 °C through a variabl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::36e97ae8546f9e8c985491cf7357bfde
https://doi.org/10.1063/1.117230
https://doi.org/10.1063/1.117230
Autor:
J. I. Malin, Milton Feng, G. E. Stillman, D. K. Sengupta, H. C. Liu, S. L. Jackson, Lianhe Li, H. C. Kuo, S. Thomas, D.A. Ahmari, Yun-Chorng Chang
Publikováno v:
Applied Physics Letters. 69:3209-3211
Lattice-matched InGaAs/InP quantum well intersubband photodetectors (QWIPs) have been grown on an InP substrate by gas source molecular beam epitaxy. Detection at 4.55 μm was observed for a narrow well p-type InGaAs QWIP which, when complimented by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b17db785499c0a36f8c9e68013cceb99
https://doi.org/10.1063/1.117963
https://doi.org/10.1063/1.117963
Autor:
Jian-Jun He, R. D. Goldberg, Ian V. Mitchell, G. C. Aers, Emil S. Koteles, Philip J. Poole, Sylvain Charbonneau, Yan Feng
Publikováno v:
Applied Physics Letters. 69:562-564
A polarization insensitive optical amplifier based on a lattice matched InGaAs/InGaAsP/InP multiple quantum well (MQW) laser structure operating at 1.5 μm has been fabricated through vacancy enhanced quantum well intermixing using broad area, high e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7ac859ef3b3cffcc641de5b53e69d2e5
https://doi.org/10.1063/1.117787
https://doi.org/10.1063/1.117787