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pro vyhledávání: '"Inder J. Bahl"'
Autor:
Inder J. Bahl
Publikováno v:
International Journal of RF and Microwave Computer-Aided Engineering. 29:e21671
Autor:
Inder J. Bahl
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 55:222-229
A design approach and test data for a broadband high-power amplifier monolithic microwave integrated circuit (MMIC) developed using MSAG MESFETs with multilevel-plating technology are presented. A low-loss matching design technique was used in the de
Autor:
Inder J. Bahl
Publikováno v:
Microwave and Optical Technology Letters. 49:1521-1525
This paper presents the design approach and test results of a four-stage 1.6-W K-band MMIC power amplifier developed for point-to-point radio applications. The design of the power amplifier was based on a small signal low loss matching technique. The
Autor:
Inder J. Bahl
Publikováno v:
International Journal of RF and Microwave Computer-Aided Engineering. 13:118-127
This article presents the design and test data for a 10W broadband balanced limiter/LNA MMIC fabricated using MSAG MESFET process. The limiter is based on Schottky diodes and the two-stage LNA is designed using high-performance MESFETs. The typical m
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 50:846-857
This historical review is divided into three sections: microwave integrated circuits (MICs), monolithic microwave integrated circuits (MMICs), and MIC and millimeter-wave integrated-circuit applications.
Autor:
Inder J. Bahl
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 49:654-664
In this paper, we describe the design, test data, and analysis of several circular spiral inductors fabricated on GaAs substrates using the multifunction self-aligned gate multilayer process. Various factors such as high inductance, high-quality and,
Autor:
Inder J. Bahl
Publikováno v:
Microwave and Optical Technology Letters. 30:322-327
This paper presents the design and test data for six-finger Lange couplers on a 3 mil GaAs substrate using the multilayer MMIC process. We achieved coupling of 3.3±0.5 dB, isolation greater than 20 dB, and return loss better than 15 dB over most of
Autor:
Inder J. Bahl
Publikováno v:
International Journal of RF and Microwave Computer-Aided Engineering. 11:385-395
This article describes the average power handling capability (APHC) of multilayer microstrip lines, including the effect of mismatch at the terminations. The data presented herein are validated by considering an example of a 12-W monolithic microwave
Autor:
Inder J. Bahl
Publikováno v:
International Journal of RF and Microwave Computer-Aided Engineering. 10:139-146
We present test data for several spiral inductors with improved quality factor fabricated on GaAs substrates using the ITT MSAG (multifunction self aligned gate) multilayer process. It is shown experimentally that the quality factor of spiral inducto
Publikováno v:
International Journal of RF and Microwave Computer‐Aided Engineering. 8:441-454
This paper describes the multilayer microstrip structure using low dielectric constant polyimide as a buffer layer between the microstrip conductor and the GaAs substrate to reduce dissipation loss, especially for very high impedance microstrip lines