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Silicon doped by molecular doping technique: role of the surface layers of doped Si on the electrical characteristics

Autor: M. Italia, R. A. Puglisi, V. Indelicato, Luisa D'Urso, Sebastiano Caccamo, Salvatore Pannitteri, Salvatore Di Franco, Antonino La Magna

Publikováno v: Materials science in semiconductor processing 42 (2016): 200–203. doi:10.1016/j.mssp.2015.08.017
info:cnr-pdr/source/autori:Caccamo, Sebastiano; Puglisi, Rosaria A.; Di Franco, Salvatore; D'Urso, Luisa; Indelicato, Valeria; Italia, Markus; Pannitteri, Salvatore; La Magna, Antonino/titolo:Silicon doped by molecular doping technique: Role of the surface layers of doped Si on the electrical characteristics/doi:10.1016%2Fj.mssp.2015.08.017/rivista:Materials science in semiconductor processing/anno:2016/pagina_da:200/pagina_a:203/intervallo_pagine:200–203/volume:42

We present results on an investigation about the chemical–physical properties of the Si surface after molecular doping (MD) method and successive annealing. The purpose of this work is to study the atomic structure of the first layers of silicon af

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8ce70f7d6887a7eb156db034459882c2
http://hdl.handle.net/20.500.11769/28288