Zobrazeno 1 - 10
of 1 245
pro vyhledávání: '"InGaZnO"'
Autor:
Minseung Kang, Ung Cho, Jaehyeon Kang, Narae Han, Hyeong Jun Seo, Jee‐Eun Yang, Seokyeon Shin, Taehyun Kim, Sangwook Kim, Changwook Jeong, Sangbum Kim
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 8, Pp n/a-n/a (2024)
Abstract Charge storage synaptic circuits employing InGaZnO thin‐film transistors (IGZO TFTs) and capacitors are a promising candidate for on‐chip trainable neural network hardware accelerators. However, IGZO TFTs often exhibit bias instability.
Externí odkaz:
https://doaj.org/article/aa30a18f4ea4494c860be9a42817b039
Autor:
Jie Luo, Yanyu Yang, Gangping Yan, Chuqiao Niu, Yunjiao Bao, Yupeng Lu, Zhengying Jiao, Jinjuan Xiang, Guilei Wang, Gaobo Xu, Huaxiang Yin, Chao Zhao, Jun Luo
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 613-618 (2024)
Amorphous oxide semiconductor-thin film transistors (AOS-TFTs) have attracted considerable attention due to their impressive performance in various applications. However, there is a limited amount of study available on the reliability of AOS-TFTs. Th
Externí odkaz:
https://doaj.org/article/a55bab4e20c54ce2bc6aaf3bc964c961
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 159-164 (2024)
This paper reports a performance optimized operational amplifier (OPAMP) using transconductance enhancement topology based on the amorphous indium- gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The performance of TFTs is enhanced by N2O p
Externí odkaz:
https://doaj.org/article/ec66fa3d8b8c4dc88f9d973f9034bcef
Autor:
Tae Jun Yang, Jung Rae Cho, Hyunkyu Lee, Hee Jun Lee, Seung Joo Myoung, Da Yeon Lee, Sung-Jin Choi, Jong-Ho Bae, Dong Myong Kim, Changwook Kim, Jiyong Woo, Dae Hwan Kim
Publikováno v:
IEEE Access, Vol 12, Pp 28531-28537 (2024)
Obtaining symmetrical and highly linear synapse weight update characteristics of analog resistive switching devices is critical for attaining high performance and energy efficiency of the neural network system. In this work, based on the two-terminal
Externí odkaz:
https://doaj.org/article/83132ecb329e4de7a490a76eceb416e7
Akademický článek
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Publikováno v:
Advanced Materials Interfaces, Vol 11, Iss 15, Pp n/a-n/a (2024)
Abstract The reliability of oxide‐semiconductor (OS) thin‐film transistors (TFTs) is significantly influenced by the gate insulator (GI). During electrical bias stress, the defect sites near the semiconductor/GI interface and/or within the GI may
Externí odkaz:
https://doaj.org/article/12b136e9de374860948453f7e1ab68f0
Publikováno v:
Advanced Materials Interfaces, Vol 11, Iss 11, Pp n/a-n/a (2024)
Abstract The utilization of a zirconium oxide (ZrO2) thin film as the insulator in a metal–insulator–semiconductor (MIS) capacitor to enhance the characteristics of thin‐film transistors is investigated. Although the high crystallinity of ZrO2
Externí odkaz:
https://doaj.org/article/b8b52f41151b4e799b7ec864a1afc545
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 10, Pp n/a-n/a (2023)
Abstract InGaZnO (IGZO) thin‐film transistors (TFTs) have gained widespread use in active matrix (AM) displays due to their decent field‐effect mobility and low off current. However, the wide bandgap of IGZO limits their application in visible li
Externí odkaz:
https://doaj.org/article/f9e23cdb90334fc393e8ff97c5b53a5e
Autor:
Yuqing Zhang, Jiye Li, Jinxiong Li, Tengyan Huang, Yuhang Guan, Yuhan Zhang, Huan Yang, Mansun Chan, Xinwei Wang, Lei Lu, Shengdong Zhang
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 8, Pp n/a-n/a (2023)
Abstract The capacitor–less embedded dynamic random access memory (eDRAM) based on oxide semiconductor (OS) transistors exhibits a promising future and thus has lead to a growing demand for nanoscale OS thin–film transistors (TFTs). In this work,
Externí odkaz:
https://doaj.org/article/e6dae85452894ecd8e90341de5af25e2
Publikováno v:
Materials, Vol 16, Iss 24, p 7510 (2023)
This study focuses on InGaZnO-based synaptic devices fabricated using reactive radiofrequency sputtering deposition with highly uniform and reliable multilevel memory states. Electron trapping and trap generation behaviors were examined based on curr
Externí odkaz:
https://doaj.org/article/43f9c2876af8416e889f276f9eb51a59