Effect of the nitrogen incorporation and fast carrier dynamics in (In,Ga)AsN/GaP self-assembled quantum dots

Autor: Xavier Marie, Cedric Robert, Jacky Even, Hélène Carrère, Olivier Durand, Samy Almosni, Andrea Balocchi, Yoan Léger, Mathieu Perrin, Jean-Philippe Gauthier, Charles Cornet

Publikováno v: Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2014, 105 (24), pp.243111. ⟨10.1063/1.4904939⟩
Applied Physics Letters, 2014, 105 (24), pp.243111. ⟨10.1063/1.4904939⟩

We report on the structural and optical properties of (In,Ga) AsN self-assembled quantum dots grown on GaP (001) substrate. A comparison with nitrogen free (In, Ga) As system is presented, showing a clear modification of growth mechanisms and a signi

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https://hal.archives-ouvertes.fr/hal-01114385/document