Low-Consumption Synaptic Devices Based on Gate-All-Around InAs Nanowire Field-Effect Transistors

Autor: Chaofei Zha, Wei Luo, Xia Zhang, Xin Yan, Xiaomin Ren

Publikováno v: Nanoscale Research Letters, Vol 17, Iss 1, Pp 1-9 (2022)

Abstract In this work, an artificial electronic synaptic device based on gate-all-around InAs nanowire field-effect transistor is proposed and analyzed. The deposited oxide layer (In2O3) on the InAs nanowire surface serves as a charge trapping layer

Externí odkaz: https://doaj.org/article/57014fd5f24d4e3aaaf43047a1f99bd7

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Semiconductor Nanowire Field-Effect Transistors as Sensitive Detectors in the Far-Infrared

Autor: Mahdi Asgari, Leonardo Viti, Valentina Zannier, Lucia Sorba, Miriam Serena Vitiello

Publikováno v: Nanomaterials, Vol 11, Iss 12, p 3378 (2021)

Engineering detection dynamics in nanoscale receivers that operate in the far infrared (frequencies in the range 0.1–10 THz) is a challenging task that, however, can open intriguing perspectives for targeted applications in quantum science, biomedi

Externí odkaz: https://doaj.org/article/9f64203d44ab4fc084af34b511c7f27c

Ultrafast Photoacoustic Nanometrology of InAs Nanowires Mechanical Properties

Autor: Marco Gandolfi, Simone Peli, Michele Diego, Stefano Danesi, Claudio Giannetti, Ivano Alessandri, Valentina Zannier, Valeria Demontis, Mirko Rocci, Fabio Beltram, Lucia Sorba, Stefano Roddaro, Francesco Rossella, Francesco Banfi

Publikováno v: Journal of physical chemistry. C 126 (2022): 6361–6372. doi:10.1021/acs.jpcc.2c01060
info:cnr-pdr/source/autori:Gandolfi M.; Peli S.; Diego M.; Danesi S.; Giannetti C.; Alessandri I.; Zannier V.; Demontis V.; Rocci M.; Beltram F.; Sorba L.; Roddaro S.; Rossella F.; Banfi F./titolo:Ultrafast Photoacoustic Nanometrology of InAs Nanowires Mechanical Properties/doi:10.1021%2Facs.jpcc.2c01060/rivista:Journal of physical chemistry. C/anno:2022/pagina_da:6361/pagina_a:6372/intervallo_pagine:6361–6372/volume:126

InAs nanowires are emerging as go-to materials in a variety of applications ranging from optoelectronics to nanoelectronics, yet a consensus on their mechanical properties is still lacking. The mechanical properties of wurtzite InAs nanowires are her

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d8ac04c78f5305ad83d5d40fbf92b6d1
https://doi.org/10.1021/acs.jpcc.2c01060