Coherent InAs/CdSe and InAs/ZnTe/CdSe heterovalent interfaces: Electronic and chemical structure

Autor: Stefan Ivanov, Mikhail V. Lebedev, Irina V. Sedova, Sergey V. Sorokin, M. N. Drozdov, Silvia Nappini, Grigorii V. Klimko, P.S. Kop'ev, Gennady Cherkashinin, V. A. Solov’ev, Elena Magnano

Publikováno v: Applied surface science 448 (2018): 455–464. doi:10.1016/j.apsusc.2018.04.113
info:cnr-pdr/source/autori:Sedova I.V.; Lebedev M.V.; Klimko G.V.; Sorokin S.V.; Solov'ev V.A.; Cherkashinin G.; Nappini S.; Magnano E.; Drozdov M.N.; Kop'ev P.S.; Ivanov S.V./titolo:Coherent InAs%2FCdSe and InAs%2FZnTe%2FCdSe heterovalent interfaces: Electronic and chemical structure/doi:10.1016%2Fj.apsusc.2018.04.113/rivista:Applied surface science/anno:2018/pagina_da:455/pagina_a:464/intervallo_pagine:455–464/volume:448

The electronic and chemical structure of two types of nearly lattice-matched InAs/(Cd,Zn)(Se,Te) heterovalent interfaces grown coherently by molecular beam epitaxy are investigated by soft x-ray photoelectron spectroscopy (SXPS) and secondary ion mas

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::66b6d0816bde22da218554dccfde6a9b
https://doi.org/10.1016/j.apsusc.2018.04.113