Zobrazeno 1 - 10
of 786
pro vyhledávání: '"InAlN"'
Autor:
Yatexu Patel, Pouya Valizadeh
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 645-650 (2024)
In this manuscript, we have investigated the impact of the scaling of the gate-source length (LGS) and gate length (LG) on the on-state breakdown voltage (BVon) of metallic-face InAlN/AlN/GaN heterostructure field effect transistors (HFETs) having fi
Externí odkaz:
https://doaj.org/article/fe7e899f8df24168be9a6cf23a251629
Autor:
Yatexu Patel, Pouya Valizadeh
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 525-533 (2024)
In this manuscript, we have investigated the impact of the scaling of the gate-source length (LGS) and gate length (LG) on the output characterises and gate-transconductance (Gm) linearity of metallic-face InAlN/AlN/GaN heterostructure field effect t
Externí odkaz:
https://doaj.org/article/c34221d098044f9b9824c3b217190e5a
Autor:
Yatexu Patel, Pouya Valizadeh
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 338-344 (2024)
The low frequency drain noise-current characteristics of metallic-face InAlN/AlN/GaN heterostructure field effect transistors (HFETs) having fin structures only under the gate, while maintaining a planar structure in the access regions, are compared
Externí odkaz:
https://doaj.org/article/3856d928e0984a0bb473abe30dce2a50
Publikováno v:
IEEE Access, Vol 12, Pp 50177-50183 (2024)
Novel In0.12Al0.88N/AlN/AlxGa $_{1-\mathrm {x}}\text{N}$ /In0.12Al0.88N metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) grown on a SiC substrate with a drain field-plate (DFP) were investigated. A symmetrically-graded A
Externí odkaz:
https://doaj.org/article/6fb213d6d9ba4f258f3b1441c4e031e3
Autor:
Qian Yu, Chunzhou Shi, Ling Yang, Hao Lu, Meng Zhang, Xu Zou, Mei Wu, Bin Hou, Wenze Gao, Sheng Wu, Xiaohua Ma, Yue Hao
Publikováno v:
Micromachines, Vol 15, Iss 10, p 1220 (2024)
In order to improve the off-state and breakdown characteristics of double-channel GaN HEMTs, an ultra-thin barrier layer was chosen as the second barrier layer. The strongly polarized and ultra-thin AlN sub-barrier and the InAlN sub-barrier are great
Externí odkaz:
https://doaj.org/article/ae7df42a95984ea4b3cbfcfd488a4a44
Autor:
Can Gong, Minhan Mi, Yuwei Zhou, Pengfei Wang, Yilin Chen, Jielong Liu, Yutong Han, Sirui An, Siyin Guo, Meng Zhang, Qing Zhu, Mei Yang, Xiaohua Ma, Yue Hao
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 72-77 (2023)
In this work, high performance InAlN/GaN HEMT based on the n+GaN regrown ohmic contact with n+GaN contact ledge structure is proposed. The regrown ohmic contact of InAlN/GaN HEMT is formed by MBE n+GaN regrowth and self-stopping etching, which makes
Externí odkaz:
https://doaj.org/article/77231092cf96498cb56106544ab5e5fe
Autor:
V.A. Lapin, I.V. Kasyanov
Publikováno v:
Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов, Iss 14, Pp 168-175 (2022)
InAlN films on Si (111) were obtained by the ion-beam deposition with various technological growth parameters. The results of the study of grown films by the scanning electron microscopy were used to identify the conditions for obtaining InAlN contin
Externí odkaz:
https://doaj.org/article/24cc54f546a5446d84c15e67f00c69a3
Autor:
Ray-Hua Horng, Po-Hsiang Cho, Jui-Che Chang, Anoop Kumar Singh, Sheng-Yuan Jhang, Po-Liang Liu, Dong-Sing Wuu, Samiran Bairagi, Cheng-Hsu Chen, Kenneth Järrendahl, Ching-Lien Hsiao
Publikováno v:
Nanomaterials, Vol 14, Iss 1, p 26 (2023)
The demand for highly sensitive and selective gas sensors has been steadily increasing, driven by applications in various fields such as environmental monitoring, healthcare, and industrial safety. In this context, ternary alloy indium aluminum nitri
Externí odkaz:
https://doaj.org/article/4cce441fb2bc4305bc97eae281a5fab2
Autor:
Ling Yang, Hao Lu, Meng Zhang, Xuerui Niu, Chuzhou Shi, Bin Hou, Minhan Mi, Mei Wu, Qing Zhu, Yang Lu, Ling Lv, Kai Cheng, Xiaohua Ma, Yue Hao
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 474-480 (2022)
In this paper, the impact of ohmic structure on channel-to-channel (C2C) coupling effect in InAlN/GaN double channel (DC) HEMTs is systematically analyzed and studied. For the un-recessed ohmic structure, the electrons in the upper channel can easily
Externí odkaz:
https://doaj.org/article/d3e3289985ee43ca9419578991dc07c9
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