Zobrazeno 1 - 10
of 890
pro vyhledávání: '"In-Man Kang"'
Autor:
Sangwoo Lee, Yoonjin Cho, Seongwon Heo, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Won-Yong Lee, Jaewon Jang
Publikováno v:
Nanomaterials, Vol 14, Iss 9, p 791 (2024)
In this study, a Y2O3 insulator was fabricated via the sol–gel process and the effect of precursors and annealing processes on its electrical performance was studied. Yttrium(III) acetate hydrate, yttrium(III) nitrate tetrahydrate, yttrium isopropo
Externí odkaz:
https://doaj.org/article/79be02e66d62416583483c08bae04bae
Autor:
Yoonjin Cho, Sangwoo Lee, Seongwon Heo, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Won-Yong Lee, Jaewon Jang
Publikováno v:
Nanomaterials, Vol 14, Iss 6, p 532 (2024)
Herein, sol–gel-processed Y2O3 resistive random-access memory (RRAM) devices were fabricated. The top electrodes (TEs), such as Ag or Cu, affect the electrical characteristics of the Y2O3 RRAM devices. The oxidation process, mobile ion migration sp
Externí odkaz:
https://doaj.org/article/0360bf6111364eaeae535f26a9bc07ca
Autor:
Won-Yong Lee, Kyoungdu Kim, Sin-Hyung Lee, Jin-Hyuk Bae, In-Man Kang, Minsu Park, Kwangeun Kim, Jaewon Jang
Publikováno v:
ACS Omega, Vol 7, Iss 12, Pp 10262-10267 (2022)
Externí odkaz:
https://doaj.org/article/a20f6596003b4834b7fc4b45525c0c12
Autor:
Taehun Lee, Hae-In Kim, Yoonjin Cho, Sangwoo Lee, Won-Yong Lee, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Sin-Hyung Lee, Jaewon Jang
Publikováno v:
Nanomaterials, Vol 13, Iss 17, p 2432 (2023)
Yttrium oxide (Y2O3) resistive random-access memory (RRAM) devices were fabricated using the sol–gel process on indium tin oxide/glass substrates. These devices exhibited conventional bipolar RRAM characteristics without requiring a high-voltage fo
Externí odkaz:
https://doaj.org/article/3c559ee45d1d4c4ca6f71fa563c4c53d
Autor:
Jin Park, Sang-Ho Lee, Ga-Eon Kang, Jun-Hyeok Heo, So-Ra Jeon, Min-Seok Kim, Seung-Ji Bae, Jeong-Woo Hong, Jae-won Jang, Jin-Hyuk Bae, Sin-Hyung Lee, In-Man Kang
Publikováno v:
Nanomaterials, Vol 13, Iss 13, p 2026 (2023)
In this study, a capacitorless one-transistor dynamic random-access memory (1T-DRAM), based on polycrystalline silicon (poly-Si) nanotube structure with a grain boundary (GB), is designed and analyzed using technology computer-aided design (TCAD) sim
Externí odkaz:
https://doaj.org/article/27c604c3ae4e4933a8d74bcfe3e70e37
Autor:
Bongho Jang, Hongki Kang, Won-Yong Lee, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Hyuk-Jun Kwon, Jaewon Jang
Publikováno v:
IEEE Access, Vol 8, Pp 123013-123018 (2020)
The effect of ultraviolet/Ozone (UV/O3)-assisted annealing process on the structural, chemical, and electrical properties of sol-gel-processed SnO2 films is investigated in this study. Via the UV/O3-assisted annealing processes, mixed-phase SnO2 film
Externí odkaz:
https://doaj.org/article/9c055fbe0e844dc28c93c0519c5a6448
Autor:
Hae-In Kim, Taehun Lee, Won-Yong Lee, Kyoungdu Kim, Jin-Hyuk Bae, In-Man Kang, Sin-Hyung Lee, Kwangeun Kim, Jaewon Jang
Publikováno v:
Materials, Vol 15, Iss 19, p 6859 (2022)
In this study, we fabricated sol-gel-processed Y2O3-based resistive random-access memory (RRAM) devices. The fabricated Y2O3 RRAM devices exhibited conventional bipolar RRAM device characteristics and did not require the forming process. The long-ter
Externí odkaz:
https://doaj.org/article/4b0969c8d6964c6cb65dff35e300ddc3
Autor:
Hyeon-Joong Kim, Do-Won Kim, Won-Yong Lee, Kyoungdu Kim, Sin-Hyung Lee, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Jaewon Jang
Publikováno v:
Materials, Vol 15, Iss 5, p 1899 (2022)
Flexible indium tin oxide (ITO)/Y2O3/Ag resistive random access memory (RRAM) devices were successfully fabricated using a thermal-energy-free ultraviolet (UV)/ozone-assisted photochemical annealing process. Using the UV/ozone-assisted photochemical
Externí odkaz:
https://doaj.org/article/dbebab743b7c4ad884de507f0f9af929
Autor:
Do-Won Kim, Hyeon-Joong Kim, Won-Yong Lee, Kyoungdu Kim, Sin-Hyung Lee, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Jaewon Jang
Publikováno v:
Materials, Vol 15, Iss 5, p 1943 (2022)
Sol–gel-processed Y2O3 films were used as active channel layers for resistive random access memory (RRAM) devices. The fabricated ITO/Y2O3/Ag RRAM devices exhibited the properties of conventional bipolar memory devices. A triethylamine stabilizer w
Externí odkaz:
https://doaj.org/article/4acc5d489c304e908a225107bbf6ab62
Autor:
So-Ra Min, Min-Su Cho, Sang-Ho Lee, Jin Park, Hee-Dae An, Geon-Uk Kim, Young-Jun Yoon, Jae-Hwa Seo, Jae-Won Jang, Jin-Hyuk Bae, Sin-Hyung Lee, In-Man Kang
Publikováno v:
Materials, Vol 15, Iss 3, p 819 (2022)
The self-heating effects (SHEs) on the electrical characteristics of the GaN MOSFETs with a stacked TiO2/Si3N4 dual-layer insulator are investigated by using rigorous TCAD simulations. To accurately analyze them, the GaN MOSFETs with Si3N4 single-lay
Externí odkaz:
https://doaj.org/article/146265db15f34c6e8c2499314ddb3335