Zobrazeno 1 - 10
of 26
pro vyhledávání: '"In Won Yeu"'
Autor:
Narendra S. Parmar, Haena Yim, Lynn A. Boatner, Panithan Sriboriboon, Yunseok Kim, Kyung Song, Jung‐Hae Choi, In Won Yeu, Ji‐Won Choi
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 7, Pp n/a-n/a (2023)
Abstract Three‐dimensional (3D) charge‐written periodic peak and valley nanoarray surfaces are fabricated on a (112¯0) ZnO single crystal grown via chemical vapor transport. Because the grown ZnO crystals exhibit uniform n‐type conduction, 3D
Externí odkaz:
https://doaj.org/article/8db35af0d2274809a4b7febfbf3effa4
Autor:
Jon López-Zorrilla, Xabier M. Aretxabaleta, In Won Yeu, Iñigo Etxebarria, Hegoi Manzano, Nongnuch Artrith
In this work, we present {\ae}net-PyTorch, a PyTorch-based implementation for training artificial neural network-based machine learning interatomic potentials. Developed as an extension of the atomic energy network ({\ae}net), {\ae}net-PyTorch provid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a94e2ed815c5631a72a7f71c5580dbff
Publikováno v:
Journal of Materials Chemistry C. 9:851-859
The solid solution of BexMg1−xO is examined as a candidate for high-κ dielectric materials by considering the dielectric constant, bandgap, and phase stability at the same time. Using ab initio calculations including phonon calculations, the subtl
Publikováno v:
Nanoscale. 12:17703-17714
This study provides an ab initio thermodynamics approach to take a step forward in the theoretical modeling on the growth of GaAs nanowires. In order to understand the effects of growth conditions on the involvement of stacking faults and polytypism,
Autor:
Gyuseung Han, In Won Yeu, Kun Hee Ye, Seungjae Yoon, Taeyoung Jeong, Seung-Cheol Lee, Cheol Seong Hwang, Jung-Hae Choi
Publikováno v:
Chemical Physics Letters. 804:139887
Publikováno v:
Materials Science and Engineering: B. 280:115713
Autor:
Haengha Seo, In Won Yeu, Dae Seon Kwon, Dong Gun Kim, Junil Lim, Tae Kyun Kim, Heewon Paik, Jung‐Hae Choi, Cheol Seong Hwang
Publikováno v:
Advanced Electronic Materials. 8:2200099
Publikováno v:
Scientific Reports
Scientific Reports, Vol 9, Iss 1, Pp 1-9 (2019)
Scientific Reports, Vol 9, Iss 1, Pp 1-9 (2019)
We theoretically investigate the mechanism of ferroelectric switching via interlayer shear in 3R MoS2 using first principles and lattice dynamics calculations. First principle calculations show the prominent anharmonic coupling of the infrared inacti
Publikováno v:
Computer Physics Communications. 268:108089
This work provides the community with an easily executable open-source Python package designed to automize the evaluation of Interfacial Phonons (InterPhon). Its strategy of arbitrarily defining the interfacial region and periodicity alleviates the e
Autor:
In Won Yeu, Hyun Cheol Koo, Gun Wu Ju, Young-hun Shin, Jung-Hae Choi, Yun Joong Lee, Hansung Kim, Hyung-jun Kim, Gyuseung Han
Publikováno v:
Journal of Alloys and Compounds. 874:159848
The evolution of the surface morphology and underlying pyramidal defects in homoepitaxial GaAs (110) layers was investigated with respect to the layer thickness up to 1 µm. Ga and As atoms coexisting in a one-to-one atomic ratio on the (110)-oriente