Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Imtiaz Hossen"'
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-12 (2022)
Abstract A two-tier Kriging interpolation approach is proposed to model jump tables for resistive switches. Originally developed for mining and geostatistics, its locality of the calculation makes this approach particularly powerful for modeling elec
Externí odkaz:
https://doaj.org/article/1f77f9783c964bc48f9d86033971200b
Autor:
Osama Yousuf, Imtiaz Hossen, Matthew W. Daniels, Martin Lueker-Boden, Andrew Dienstfrey, Gina C. Adam
Publikováno v:
IEEE Journal on Emerging and Selected Topics in Circuits and Systems. 13:382-394
Data-driven modeling approaches such as jump tables are promising techniques to model populations of resistive random-access memory (ReRAM) or other emerging memory devices for hardware neural network simulations. As these tables rely on data interpo
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Autor:
Sangmin Oh, Gusphyl Justin, J.E. Richie, Chung Hoon Lee, Henry Medeiros, Imtiaz Hossen, Juan Luglio
Publikováno v:
IEEE Transactions on Instrumentation and Measurement. 70:1-9
Microwave measurements and machine learning algorithms are presented to estimate metal ion concentrations in drinking water. A novel block loop gap resonator (BLGR) as a microwave probe is designed and fabricated to estimate Pb ion concentrations in
Publikováno v:
2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Publikováno v:
Scientific Reports, Vol 9, Iss 1, Pp 1-9 (2019)
Scientific Reports
Scientific Reports
Temperature increases during dielectrophoresis (DEP) can affect the response of biological entities, and ignoring the effect can result in misleading analysis. The heating mechanism of a DEP device is typically considered to be the result of Joule he
Publikováno v:
Scientific reports. 12(1)
A two-tier Kriging interpolation approach is proposed to model jump tables for resistive switches. Originally developed for mining and geostatistics, its locality of the calculation makes this approach particularly powerful for modeling electronic de