Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Iman Chahardah Cherik"'
Autor:
Iman Chahardah Cherik, Saeed Mohammadi
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-11 (2024)
Abstract This paper aims to evaluate a groundbreaking bio-TFET that utilizes the fringe fields capacitance concept to detect neutral and charged biomolecules. While facilitating fabrication process and scalability, this innovative bio-TFET is able to
Externí odkaz:
https://doaj.org/article/380d8f1ef148400d98fd9fd8af6c339d
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-12 (2023)
Abstract A vertical tunneling field effect transistor composed of a doping-less tunneling heterojunction and an n+-drain is presented in this paper. Two highly-doped p+ silicon layers are devised to induce holes in an intrinsic source region. Due to
Externí odkaz:
https://doaj.org/article/e9d2362f8b7145d189fa7af5cd9c974a
Autor:
Iman Chahardah Cherik, Saeed Mohammadi
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-11 (2023)
Abstract This article presents a novel dielectric-modulated biosensor based on a tunneling field-effect transistor. It comprises a dual doping-less tunneling junction that lies above an n+ drain region. By employing the wet-etching technique, two cav
Externí odkaz:
https://doaj.org/article/f563d4b589da49be834fea78f5d5d29c
Autor:
Iman Chahardah Cherik, Saeed Mohammadi
Publikováno v:
IEEE Access, Vol 11, Pp 83881-83886 (2023)
In this article, we propose a novel vertical TFET that benefits from dual doping-less tunneling junction. Due to the low on-state current of silicon-based TFETs, we employ a dual-source configuration and a high-k dielectric material in the oxide regi
Externí odkaz:
https://doaj.org/article/a1f4dcb94a1e4901ab8d56be3555167a
Autor:
Iman Chahardah Cherik, Saeed Mohammadi
Publikováno v:
IEEE Transactions on Electron Devices. 69:5170-5176
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c433fa510c03284e5f362c7e40489eb
https://doi.org/10.1109/ted.2022.3189326
https://doi.org/10.1109/ted.2022.3189326
Autor:
Iman Chahardah Cherik, Saeed Mohammadi
Publikováno v:
IEEE Sensors Journal. 22:10308-10314
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0135b9a40531e3f3d35ff6c0c979fed
https://doi.org/10.1109/jsen.2022.3163475
https://doi.org/10.1109/jsen.2022.3163475
Autor:
Iman Chahardah Cherik, Saeed Mohammadi
Publikováno v:
IEEE Transactions on Electron Devices. 69:1474-1479
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3d39c50b47ef1793a603fb0063a1ac5
https://doi.org/10.1109/ted.2021.3138669
https://doi.org/10.1109/ted.2021.3138669
Autor:
Iman Chahardah Cherik, Saeed Mohammadi
Publikováno v:
Journal of Computational Electronics. 21:235-242
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9875896070d429171fd88781a188a635
https://doi.org/10.1007/s10825-021-01849-7
https://doi.org/10.1007/s10825-021-01849-7
Publikováno v:
IEEE Transactions on Electron Devices. 69:364-369
In this article, we introduce a double-gate nanotube tunneling field-effect transistor with high scalability based on the Si/Ge heterostructure. Our device includes two Ge source regions which are covered by the gate metal to facilitate line tunnelin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cca13efd9df1d6ad376ba42a6b8a979
https://doi.org/10.1109/ted.2021.3124984
https://doi.org/10.1109/ted.2021.3124984
Publikováno v:
Micro and Nanostructures. 174:207477
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edeb46887671737d0e1ce3b21abb4e51
https://doi.org/10.1016/j.micrna.2022.207477
https://doi.org/10.1016/j.micrna.2022.207477