Výsledky vyhledávání - "Imamov, Rafik M."

Epitaxial low-temperature growth of In0.5Ga0.5As films on GaAs(100) and GaAs(111)A substrates using a metamorphic buffer

Autor: A. N. Klochkov, G. B. Galiev, Imamov Rafik M, S. S. Pushkarev, P. P. Maltsev, I. N. Trunkin, E. A. Klimov, A. L. Vasiliev

Publikováno v: Crystallography Reports. 62:947-954

A complex investigation of epitaxial In0.5Ga0.5As films grown on GaAs substrates with crystallographic orientations of (100) and (111)A in the standard high- and low-temperature modes has been performed. The parameters of the GaAs substrate and In0.5

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cc30f7833c56f9e61ff8cf354113ba12
https://doi.org/10.1134/s1063774517060104

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Influence of arsenic flow on the crystal structure of epitaxial GaAs grown at low temperatures on GaAs (100) and (111)A substrates

Autor: G. B. Galiev, I. N. Trunkin, P. P. Maltsev, A. L. Vasiliev, E. A. Klimov, Imamov Rafik M, S. S. Pushkarev

Publikováno v: Crystallography Reports. 62:82-90

The influence of arsenic flow in a growth chamber on the crystal structure of GaAs grown by molecular-beam epitaxy at a temperature of 240°C on GaAs (100) and (111)A substrates has been investigated. The flow ratio γ of arsenic As4 and gallium was

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8231954abd539ecb6393ed5b36aec55f
https://doi.org/10.1134/s1063774517010072

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High-resolution X-ray diffractometry and transmission electron microscopy as applied to the structural study of InAlAs/InGaAs/InAlAs multilayer transistor nanoheterostructures

Autor: M. Yu. Presniakov, I. N. Trunkin, P. P. Maltsev, S. S. Pushkarev, E. A. Klimov, G. V. Ganin, G. B. Galiev, Imamov Rafik M, Andrey S. Orekhov, A. L. Vasil’ev, O. M. Zhigalina

Publikováno v: Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 10:495-509

InAlAs/InGaAs/InAlAs nanoheterostructures with different structures of metamorphic buffer layer and quantum well, which were grown by means of molecular-beam epitaxy on GaAs and InP substrates, are investigated. The laboratory technology of the growt

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a94079701819a81fdad28886bae3494f
https://doi.org/10.1134/s1027451016030095

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Structural and electrophysical properties of In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As/InP HEMT nanoheterostructures with different combinations of InAs and GaAs inserts in quantum well

Autor: P. P. Maltsev, A. N. Klochkov, S. S. Pushkarev, D. V. Lavruhin, G. B. Galiev, A. L. Vasiliev, E. A. Klimov, Imamov Rafik M, I. S. Vasil’evskii, I. N. Trunkin

Publikováno v: Crystallography Reports. 60:397-405

A complex investigation of structural and electrical properties of In0.52Al0.48As/In y Ga1 − y As/In0.52Al0.48As nanoheterostructures on InP substrates containing thin InAs and GaAs inserts in a quantum well (QW) has been performed. The GaAs nanola

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c7f1774ac924429605064746a66af6b2
https://doi.org/10.1134/s1063774515030062

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Electrophysical characteristics and structural parameters of metamorphic HEMT nanoheterostructures In0.7Al0.3As/In0.7Ga0.3As/In0.7Al0.3As containing superlattices with different numbers of periods in the metamorphic buffer

Autor: Andrey S. Orekhov, R. R. Galiev, E. A. Klimov, P. P. Maltsev, Imamov Rafik M, G. B. Galiev, S. S. Pushkarev

Publikováno v: Crystallography Reports. 59:425-429

The results of studying the electrophysical characteristics and structural parameters of metamorphic In0.7Al0.3As/In0.7Ga0.3As/In0.7Al0.3As HEMT nanoheterostructures epitaxially grown on GaAs (100) substrates have been presented. A linear metamorphic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::07ee2c2d9b79808f983cc797cef230d5
https://doi.org/10.1134/s1063774514030092

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X-Ray diffractometry of metamorphic nanoheterostructures

Autor: I. A. Subbotin, P. P. Maltsev, S. S. Pushkarev, E. A. Klimov, Imamov Rafik M, G. B. Galiev

Publikováno v: Crystallography Reports. 59:258-265

Elastic strains in active regions of metamorphic transistor nanoheterostructures In0.7Al0.3As/In0.7Ga0.3As/In0.7Al0.3As on GaAs substrates with a metamorphic buffer (MB) having different complex designs have been determined by X-ray diffractometry. T

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bfa49d4c812d420bcbcbed08f585d3f9
https://doi.org/10.1134/s1063774514020096

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Electrical and structural characteristics of metamorphic In0.38Al0.62As/In0.37Ga0.63As/In0.38Al0.62As HEMT nanoheterostructures

Autor: Imamov Rafik M, O. M. Zhigalina, G. B. Galiev, A. N. Klochkov, D. N. Khmelenin, E. A. Klimov, S. S. Pushkarev, P. P. Maltsev, A. N. Kuskova

Publikováno v: Crystallography Reports. 58:914-919

The influence of the metamorphic buffer design and epitaxial growth conditions on the electrical and structural characteristics of metamorphic In0.38Al0.62As/In0.37Ga0.63As/In0.38Al0.62As high electron mobility transistor (MHEMT) nanoheterostructures

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8559e2e86837e330a1d97bfaefc4c0ea
https://doi.org/10.1134/s1063774513060114

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Study of new designs for the InAlAs metamorphic buffer on GaAs substrates with distributed compensation of elastic deformations

Autor: I. S. Vasil’evskii, G. B. Galiev, E. A. Klimov, S. S. Pushkarev, Imamov Rafik M

Publikováno v: Semiconductors. 47:997-1002

Two new designs for a metamorphic buffer, which are modifications of the InxAl1 − xAs metamorphic buffer due to groups of layers with differing lattice parameters, are proposed and implemented. This makes it possible to affect the relaxation of the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::38cc4976ce95094a9f3fb02b974cc630
https://doi.org/10.1134/s1063782613070075

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Study of the influence of strained superlattices introduced into a metamorphic buffer on the electrophysical properties and the atomic structure of InAlAs/InGaAs MHEMT heterostructures

Autor: G. B. Galiev, O. M. Zhigalina, I. S. Vasil’evskii, S. S. Pushkarev, E. A. Klimov, V. G. Zhigalina, Imamov Rafik M

Publikováno v: Semiconductors. 47:532-537

The results of studying the influence of strained superlattices introduced into a metamorphic buffer on the electrophysical properties and atomic crystal structure of In0.70Al0.30As/In0.76Ga0.24As/In0.70Al0.30As metamorphic high-electron-mobility tra

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3c0b8c0096e7528003b647bcac184f6a
https://doi.org/10.1134/s1063782613040076

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Metamorphic InAlAs/InGaAs/InAlAs/GaAs HEMT heterostructures containing strained superlattices and inverse steps in the metamorphic buffer

Autor: Е.I. Suvorova, Philippe A. Buffat, G. B. Galiev, Imamov Rafik M, I. S. Vasil’evskii, Е.А. Klimov, Benjamin Dwir, S. S. Pushkarev

Publikováno v: Journal of Crystal Growth. 366:55-60

Metamorphic InxAl1-xAs buffer design features influence on electrophysical and structural properties of the heterostructures was investigated. Two types of MHEMT heterostructures In0.70Al0.30As/In0.76Ga0.24As with novel design contained inverse steps

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6e0eec88a7d1b93596cd77b73bfb5038
https://doi.org/10.1016/j.jcrysgro.2012.12.017

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