Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Imai Akifumi"'
Autor:
Tatsuro Watahiki, Hidetoshi Koyama, Takuma Nanjo, Imai Akifumi, T. Imazawa, Yoshitsugu Yamamoto, Naruhisa Miura, A. Kiyoi, Tetsuro Hayashida
Publikováno v:
Electronics Letters, Vol 57, Iss 17, Pp 670-671 (2021)
SiO2 film deposition and subsequent high‐temperature annealing resulted in the generation of a two‐dimensional electron gas (2DEG) at Al(Ga)N/GaN hetero‐interfaces, of which the 2DEG was originally fully depleted. The obtained mobilities and sh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::45301703e742f18253b0a44b4ef082bf
https://doaj.org/article/2caa1d42cf174e1bbe01e615472d5c46
https://doaj.org/article/2caa1d42cf174e1bbe01e615472d5c46
Publikováno v:
In Thin Solid Films 2007 515(22):8175-8178
Publikováno v:
In Thin Solid Films 2007 515(22):8133-8135
Akademický článek
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Publikováno v:
Japanese Journal of Applied Physics. 58:SBBD09
The effects of post-annealing processes for normally-off GaN metal-oxide semiconductor heterojunction field-effect transistors (MOS-HFETs) with a thin AlN barrier layer are investigated. These annealing processes are post-deposition annealing (PDA) a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab9de0c80ae4cdc0bce37c9edfdf02b5
https://doi.org/10.7567/1347-4065/aafb5f
https://doi.org/10.7567/1347-4065/aafb5f
Publikováno v:
Electronics Letters. 50:1577-1579
The high-frequency characteristics of high electron mobility transistors applying AlGaN for a channel layer (AlGaN channel HEMTs) with greater impacts of alloy disorder scattering than those in conventional HEMTs with a GaN channel layer (GaN channel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9111de72f53e75e00701b0987af52de
https://doi.org/10.1049/el.2014.1874
https://doi.org/10.1049/el.2014.1874
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
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Autor:
Takuma Nanjo, Kenichiro Kurahashi, Muneyoshi Suita, Imai Akifumi, Matsuda Takashi, Eiji Yagyu
Publikováno v:
Japanese Journal of Applied Physics. 55:05FK05
AlGaN/GaN high-electron-mobility transistors (HEMTs) with Schottky gate contacts are strong candidates for high-power applications with high-frequency operation. The existence of interfacial traps between Schottky gate contacts and an AlGaN surface i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74619cd28fce386e6de027c08dd8bcb8
https://doi.org/10.7567/jjap.55.05fk05
https://doi.org/10.7567/jjap.55.05fk05
Autor:
Yuji Abe, Takuma Nanjo, H. Ohji, H. Okazaki, Eiji Yagyu, Imai Akifumi, Muneyoshi Suita, Yosuke Suzuki
Publikováno v:
Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3825d8d4dd211bb322b842702da07d2c
https://doi.org/10.7567/ssdm.2012.f-2-5
https://doi.org/10.7567/ssdm.2012.f-2-5
Autor:
Koji Yamanaka, Yosuke Suzuki, Takuma Nanjo, A. Shima, Katsuomi Shiozawa, Yuji Abe, Muneyoshi Suita, Imai Akifumi, Eiji Yagyu
Publikováno v:
Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d693c10afdee582995c42f2cc56c47c0
https://doi.org/10.7567/ssdm.2011.a-1-4
https://doi.org/10.7567/ssdm.2011.a-1-4