Identification of dislocation characteristics in Na-flux-grown GaN substrates using bright-field X-ray topography under multiple-diffraction conditions.

Autor: Tsusaka, Y., Mizuochi, H., Imanishi, M., Imade, M., Mori, Y., Matsui, J.

Publikováno v: Journal of Applied Physics; 2019, Vol. 125 Issue 12, pN.PAG-N.PAG, 7p, 7 Diagrams, 1 Chart

Leakage current analysis for dislocations in Na-flux GaN bulk single crystals by conductive atomic force microscopy.

Autor: Hamachi, T., Takeuchi, S., Tohei, T., Imanishi, M., Imade, M., Mori, Y., Sakai, A.

Publikováno v: Journal of Applied Physics; 2018, Vol. 123 Issue 16, pN.PAG-N.PAG, 6p, 4 Diagrams, 1 Chart, 3 Graphs

Control of dislocation morphology and lattice distortion in Na-flux GaN crystals.

Autor: Takeuchi, S., Mizuta, Y., Imanishi, M., Imade, M., Mori, Y., Sumitani, K., Imai, Y., Kimura, S., Sakai, A.

Publikováno v: Journal of Applied Physics; 2017, Vol. 122 Issue 10, p1-6, 6p, 1 Color Photograph, 1 Black and White Photograph, 4 Diagrams, 1 Chart, 2 Graphs

Dislocation confinement in the growth of Na flux GaN on metalorganic chemical vapor deposition-GaN.

Autor: Takeuchi, S., Asazu, H., Imanishi, M., Nakamura, Y., Imade, M., Mori, Y., Sakai, A.

Publikováno v: Journal of Applied Physics; 2015, Vol. 118 Issue 24, p245306-1-245306-7, 7p, 6 Diagrams, 2 Charts

nPiezoelectric coefficients of GaN determined by hopping conduction of carriers.

Autor: Adachi, K., Ogi, H., Nagakubo, A., Nakamura, N., Hirao, M., Imade, M., Yoshimura, M., Mori, Y.

Publikováno v: Applied Physics Letters; 10/31//2016, Vol. 109 Issue 18, p182108-1-182108-4, 4p, 1 Chart, 3 Graphs