Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Imad F. Husein"'
Publikováno v:
Journal of Materials Science Letters. 21:1611-1614
Publikováno v:
Journal of Physics D: Applied Physics. 33:2869-2874
The effect of plasma immersion ion implantation (PIII) treatment on silicone surfaces was investigated by x-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR-ATR), and scanning electron microscopy (SEM). Low-energy (
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 121:226-230
This paper provides a review of the recent research on plasma immersion ion implantation (PIII) for materials modification and semiconductor processing performed by the Plasma Science group at Northeastern University. The results from two PIII experi
Autor:
Fan Li, Yuanzhong Zhou, Yu. Gudimenko, Ryne C. Allen, Jacob I. Kleiman, Chung Chan, Imad F. Husein, Clark V. Cooper
Publikováno v:
Materials Science and Engineering: A. 209:10-15
Carbon nitride (CN) thin films were synthesized by combining vacuum arcs and plasma ion implantation techniques. Three methods were investigated: plasma ion implantation into carbon films deposited by anodic vacuum arcs (AAPII), continuous cathodic v
Publikováno v:
Journal of Materials Science Letters. 19:1883-1885
Publikováno v:
IEEE Conference Record - Abstracts. 1996 IEEE International Conference on Plasma Science.
Summary form only given, as follows. The anodic vacuum are was used to deposit thin carbon films (a-C) on Si substrates. The arc produces a partially ionized carbon vapor plasma (less than 20% ionized) and is sustained by a consumable anode. Films wi
Publikováno v:
MRS Proceedings. 388
Amorphous carbon films (a-C) deposited by the anodic vacuum arc on Si substrates were implanted with nitrogen using the Plasma Immersion Ion Implantation (PIII) technique to form carbon nitride films (CNX). Scanning Electron Microscopy (SEM) of the a
Publikováno v:
MRS Proceedings. 396
Carbon nitride (CNX) films were prepared by nitrogen ion implantation into carbon films (a-C) deposited on Si substrates by the anodic vacuum arc. Plasma Immersion Ion Implantation (PIII) and Ion Beam (IB) implantation methods were used. X-ray Photoe
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Conference
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