Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Im-Gyu Yeo"'
Autor:
Im Gyu Yeo, Soon-Ku Hong, Tai Hee Eun, Han Suk Seo, Seung Seok Lee, Jang Yul Kim, Myong Chuel Chun
Publikováno v:
Materials Science Forum. 1004:51-56
We investigated the relation between the nucleation of dislocations and the lattice misfits by nitrogen concentration difference between seed and grown crystal during the initial stage of growth. 4H-SiC single crystals were grown with various nitroge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f5ac5062ce379335c0840cbd229a08d
https://doi.org/10.4028/www.scientific.net/msf.1004.51
https://doi.org/10.4028/www.scientific.net/msf.1004.51
Publikováno v:
Materials Science Forum. 963:64-67
The generation and transformation of dislocations in 4H-SiC crystals grown by PVT were investigated. Experiments were carried out in two stages for more comprehensive observation on dislocation behaviors. For the first stage known as initial growth,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b64e097af2148c325d5eeb323254c21d
https://doi.org/10.4028/www.scientific.net/msf.963.64
https://doi.org/10.4028/www.scientific.net/msf.963.64
Publikováno v:
ECS Journal of Solid State Science and Technology. 11:064003
n-type SiC wafers with localized 4H, 6H, and 15 R polytype grains were photographed and their colors were analyzed to find correlations among polytypes, carrier concentration and apparent color. The SiC wafers were photographed and the color informat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a98f241957399bd2319bc78c6a8f17e5
https://doi.org/10.1149/2162-8777/ac760e
https://doi.org/10.1149/2162-8777/ac760e
Autor:
Myoung-Chuel Chun, Soon-Ku Hong, Myoungho Jeong, Jeong Yong Lee, Dong Yeob Kim, Im Gyu Yeo, Tai-Hee Eun
Publikováno v:
Korean Journal of Materials Research. 26:656-661
4H- and 6H-SiC grown by physical vapor transport method were investigated by transmission electron microscopy (TEM). From the TEM diffraction patterns observed along the [11-20] zone axis, 4H- and 6H-SiC were identified due to their additional diffra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5011d44906617e83f077513d5ff005c
https://doi.org/10.3740/mrsk.2016.26.11.656
https://doi.org/10.3740/mrsk.2016.26.11.656
Autor:
Won-Jae Lee, Hee Jun Lee, Im Gyu Yeo, Hwang Ju Kim, Jung Gon Kim, Hee Won Shin, Donghoon Lee, Mi Seon Park, Si Hyun Lee, Myong Chuel Chun, Yeon Suk Jang
Publikováno v:
Materials Science Forum. 858:113-116
The present research is focused to investigate a role of the porous graphite (PG) plate that could improve the quality of 4H-SiC crystal. The grown crystal in porous graphite inserted crucible showed the lower intensity of Al, B and Ti impurity conce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c14a95a5667c9f141ac680fd0c02f2c2
https://doi.org/10.4028/www.scientific.net/msf.858.113
https://doi.org/10.4028/www.scientific.net/msf.858.113
Autor:
Hee Tae Lee, Jung Gon Kim, Hee Won Shin, Jang Yul Kim, Mi Seon Park, Myoung Chul Chun, Yeon Suk Jang, Hee Jun Lee, Si Hyun Lee, Tai Hee Eun, Won-Jae Lee, Im Gyu Yeo
Publikováno v:
Materials Science Forum. :43-46
The effect of the porous graphite plate above the source material on properties of silicon carbide (SiC) crystals grown by Physical Vapor Transport method has been investigated. The porous graphite plate was inserted on source powder to produce a mor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cd6d67756edb2153c1b1cdc57f20c68
https://doi.org/10.4028/www.scientific.net/msf.821-823.43
https://doi.org/10.4028/www.scientific.net/msf.821-823.43
Autor:
Won-Jae Lee, Tai-Hee Eun, Hee Tae Lee, Jang-Yul Kim, Jung-Gon Kim, Yeon-Suk Jang, Si-Hyun Lee, Hee-Jun Lee, Hee Won Shin, Im-Gyu Yeo, Mi-Seon Park, Myoung-Chul Chun
Publikováno v:
Journal of the Korean Crystal Growth and Crystal Technology. 25:51-55
The present research is focused on the effect of porous graphite what is influenced on the 4H-SiC crystal growth by PVT method. We expect that it produces more C-rich and a change of temperature gradient for polytype stability of 4H-SiC crystal as ad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f767d88918d2405d4af3f0357dcc4cc
https://doi.org/10.6111/jkcgct.2015.25.2.051
https://doi.org/10.6111/jkcgct.2015.25.2.051
Autor:
Myong Chuel Chun, Jung Young Jung, Im Gyu Yeo, Heung Rak Kim, Doe Hyung Lee, Sang Il Lee, Mi Seon Park, Hee Tae Lee, Won-Jae Lee, Soon-Ku Hong
Publikováno v:
Materials Science Forum. :11-14
SiC crystal ingots were grown on 6H-SiC dual-seed crystal with different surface properties by a PVT (Physical Vapor Transport) technique. And then SiC crystal wafers sliced from the SiC ingots were systematically investigated in order to find out th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec5b40261225bf810a232d9510e2a4de
https://doi.org/10.4028/www.scientific.net/msf.740-742.11
https://doi.org/10.4028/www.scientific.net/msf.740-742.11
Autor:
Park Jong Hwi, Jang Yul Kim, Im Gyu Yeo, Seung Seok Lee, Myoung Chul Chun, Il Soo Kim, Tai Hee Eun, Tae Kyoung Yang, Won Jae Lee
Publikováno v:
Materials Science Forum. :17-20
The present research was focused to investigate various process parameters influenced on the large 4H-SiC crystal growth on a 6H-SiC seed by PVT method. The crucible diameter along horizontal axial direction and inserted graphite ring was modified to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0a589c4ed7675dc4a5ade8988dae6b4
https://doi.org/10.4028/www.scientific.net/msf.717-720.17
https://doi.org/10.4028/www.scientific.net/msf.717-720.17
Autor:
Jong-Hwi Park, Mi-Seon Park, Im-Gyu Yeo, Seung-Seok Lee, Won-Jae Lee, Sang-Il Lee, Myong-Chuel Chun, Woo Sung Yang, Byoung-Chul Shin, Tai-Hee Eun, Jung-Young Jung
Publikováno v:
Journal of the Korean Physical Society. 59:448-451
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c12290d958f21effa4382a5f2ea9913
https://doi.org/10.3938/jkps.59.448
https://doi.org/10.3938/jkps.59.448