Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Im Soo Park"'
Autor:
Chang-ki Hong, Jeong Nam Han, Kun Tack Lee, Joo Tae Moon, Sang-Yong Kim, Han-Ku Cho, Im Soo Park, Ji Hoon Cha, Mong Sup Lee
Publikováno v:
Solid State Phenomena. 134:75-78
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3655f1ce7f1ec8bcae6c2ca2a8c58912
https://doi.org/10.4028/www.scientific.net/ssp.134.75
https://doi.org/10.4028/www.scientific.net/ssp.134.75
Autor:
Donggun Park, Sung Hwan Kim, Byung-Il Ryu, Dong-Won Kim, Heungsik Park, Im Soo Park, Je Bum Yoon, S. J. Hong, Na-Young Kim, Yong Lack Choi, Chang Woo Oh, Hyun Jun Bae, Sung-Han Kim
Publikováno v:
2006 International Electron Devices Meeting.
In this article, we proposed and successfully demonstrated 25 nm TiN metal gate nanorod transistors with laterally and vertically scaled actives without process burdens. They showed the excellent short channel effect immunity and high current drivabi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1a152d94aa6d9d00d7eb5ade7f5e6e3
https://doi.org/10.1109/iedm.2006.346927
https://doi.org/10.1109/iedm.2006.346927
Autor:
Kun-tack Lee, Dae-hyuk Kang, Yoon-ho Son, Im-soo Park, Joo-Tae Moon, Chang-ki Hong, Mong Sup Lee, Chang-Jin Kang, Dong-Gyun Han
Publikováno v:
ECS Meeting Abstracts. :1034-1034
Introduction Silicon has been used successfully for semiconductor material because it can have a high degree of purity at a low cost, and shows the good mechanical, chemical and electrical properties. In the respect of electrical properties, the pure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::435b5cc3e76f1a4fb2d812ee850ee20c
https://doi.org/10.1149/ma2007-02/18/1034
https://doi.org/10.1149/ma2007-02/18/1034
Autor:
Sung Hwan Kim, Chang Woo Oh, Yong Lack Choi, Sung-In Hong, Na Young Kim, Hyun Jun Bae, Sung-Han Kim, Heung Sik Park, Je Bum Yoon, Im Soo Park, Dong-Won Kim, Donggun Park, Byung-Il Ryu
Publikováno v:
2006 International Electron Devices Meeting; 2006, p1-4, 4p
Autor:
Hyung-Suk Jung, Jong-Ho Lee, Sung Kee Han, Yun-Seok Kim, Ha Jin Lim, Min Joo Kim, Seok Joo Doh, Mi Young Yu, Nae-In Lee, Hye-Lan Lee, Taek-Soo Jeon, Hag-Ju Cho, Sang Bom Kang, Sang Yong Kim, Im Soo Park, Dongchan Kim, Hion Suck Baik, Young Su Chung
Publikováno v:
2005 Digest of Technical Papers. 2005 Symposium on VLSI Technology; 2005, p232-233, 2p