Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Ilya Zwieback"'
Autor:
Varathajan Rengarajan, Xueping Xu, Gary E. Ruland, Angelo Alberto Messina, Ilya Zwieback, M. Musolino, Hui Wang, Danilo Crippa, Michele Calabretta, Marco Mauceri
Publikováno v:
Materials Science in Semiconductor Processing. 135:106088
In recent years, the power electronics industry based on silicon carbide (SiC) has rapidly expanded, but suppliers are struggling to meet the market demand both for final devices and for the starting raw material, which nowadays consists of SiC wafer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7f64f5d5ad1d37cdb077ffbe89cce92
https://doi.org/10.1016/j.mssp.2021.106088
https://doi.org/10.1016/j.mssp.2021.106088
Publikováno v:
Materials Science Forum. 897:363-366
We investigated selective etching of SiC in molten KOH + NaOH + Na2O2 mixtures in application to defect analysis. Etch rate was measured as a function of etchant composition, temperature and other process variables. Optimal etching conditions were es
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aed3da5a277b6a8983ec588b229f7277
https://doi.org/10.4028/www.scientific.net/msf.897.363
https://doi.org/10.4028/www.scientific.net/msf.897.363
Autor:
Gary E. Ruland, Balaji Raghothamachar, Michael Dudley, Fangzhen Wu, A. Souzis, Ping Wu, Ilya Zwieback, S. Byrappa, Thomas Anderson, Huanhuan Wang
Publikováno v:
Journal of Crystal Growth. 401:423-430
Synchrotron White Beam X-ray Topography (SWBXT) has been used to image and analyze a distinctive stacking fault pattern observed in 4H-SiC wafers. The pattern often consists of a six-pointed star comprised of multiple layers of rhombus-shaped stackin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac61e11589633cae920a1f2e82422d14
https://doi.org/10.1016/j.jcrysgro.2014.01.078
https://doi.org/10.1016/j.jcrysgro.2014.01.078
Autor:
Ping Wu, A. Gupta, Gary E. Ruland, Mark Ramm, Varatharajan Rengarajan, Ilya Zwieback, Xueping Xu
Publikováno v:
ECS Transactions. 64:27-33
Large SiC single crystals, semi-insulating and n-type, up to 150mm in diameter are grown by II-VI Incorporated. In addition to the recent product launch of 150mm substrates, significant improvements have been made in crystal quality. The values of FW
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a29211f45b19157e594a27f585954d13
https://doi.org/10.1149/06407.0027ecst
https://doi.org/10.1149/06407.0027ecst
Autor:
Michael Dudley, Fangzhen Wu, Xueping Xu, Ping Wu, Ilya Zwieback, S. Byrappa, Huanhuan Wang, Balaji Raghothamachar
Publikováno v:
Journal of Electronic Materials. 42:787-793
Synchrotron white-beam x-ray topography (SWBXT) studies of defects in 100-mm-diameter 4H-SiC wafers grown using physical vapor transport are presented. SWBXT enables nondestructive examination of thick and large-diameter SiC wafers, and defects can b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b0ca952dbf39fa68d97fe33c6e484cb
https://doi.org/10.1007/s11664-012-2379-9
https://doi.org/10.1007/s11664-012-2379-9
Publikováno v:
Materials Science Forum. :361-364
X-ray rocking curve characterization is a relatively fast and nondestructive technique that can be utilized to evaluate the crystal quality of SiC substrates. The contribution of lattice curvature to rocking curve broadening is estimated, and shown t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9443216c0be5d6671f6c43fe8c417a14
https://doi.org/10.4028/www.scientific.net/msf.600-603.361
https://doi.org/10.4028/www.scientific.net/msf.600-603.361
Publikováno v:
Materials Science Forum. :35-38
II-VI is developing large-diameter SiC crystals to be used as lattice-matched, high thermal conductivity substrates for new generation GaN-based and SiC-based semiconductor devices. Large-diameter 6H SiC single crystals are grown at II-VI using our A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fb2370905f693c4d5e233c6b984b8c9
https://doi.org/10.4028/www.scientific.net/msf.600-603.35
https://doi.org/10.4028/www.scientific.net/msf.600-603.35
Publikováno v:
Journal of Crystal Growth. 310:1804-1809
SiC single crystals grown by sublimation exhibit relatively high dislocation densities and often contain a network of slightly misoriented grains. In order to understand the evolution of dislocation structures and grain boundaries during growth, we s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ca6fce32c3cbc453aff3d1180040937
https://doi.org/10.1016/j.jcrysgro.2007.11.078
https://doi.org/10.1016/j.jcrysgro.2007.11.078
Autor:
Ejiro Emorhokpor, Esteban Romano, Ping Wu, Thomas Kerr, Jie Zhang, Murugesu Yoganathan, Ilya Zwieback
Publikováno v:
Materials Science Forum. :247-250
Several morphological defects in 4H SiC epitaxial wafers, including Comets and Triangles, may significantly impact on the yield and reliability of SiC devices. The formation of these epilayer defects is closely related to the substrate quality. This
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd3045abca40a3ba4dd1ad4271f50243
https://doi.org/10.4028/www.scientific.net/msf.556-557.247
https://doi.org/10.4028/www.scientific.net/msf.556-557.247
Autor:
Andrew E. Souzis, Ejiro Emorhokpor, J. Chen, A. Gupta, Edward Semenas, Ilya Zwieback, Thomas Anderson
Publikováno v:
Materials Science Forum. :43-46
Over the past year, II-VI has transitioned from 2” to 3” commercial SiC substrates. Large-diameter semi-insulating 6H-SiC and n-type 4H-SiC single crystals are grown using the Advanced PVT growth process. Expansion of boule diameter from 2 to 3 a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afbf9f1b3259538f585cb4e947ad40ee
https://doi.org/10.4028/www.scientific.net/msf.527-529.43
https://doi.org/10.4028/www.scientific.net/msf.527-529.43