Zobrazeno 1 - 10
of 41
pro vyhledávání: '"Ilya V. Karpov"'
Autor:
José P. B. Silva, Ruben Alcala, Uygar E. Avci, Nick Barrett, Laura Bégon-Lours, Mattias Borg, Seungyong Byun, Sou-Chi Chang, Sang-Wook Cheong, Duk-Hyun Choe, Jean Coignus, Veeresh Deshpande, Athanasios Dimoulas, Catherine Dubourdieu, Ignasi Fina, Hiroshi Funakubo, Laurent Grenouillet, Alexei Gruverman, Jinseong Heo, Michael Hoffmann, H. Alex Hsain, Fei-Ting Huang, Cheol Seong Hwang, Jorge Íñiguez, Jacob L. Jones, Ilya V. Karpov, Alfred Kersch, Taegyu Kwon, Suzanne Lancaster, Maximilian Lederer, Younghwan Lee, Patrick D. Lomenzo, Lane W. Martin, Simon Martin, Shinji Migita, Thomas Mikolajick, Beatriz Noheda, Min Hyuk Park, Karin M. Rabe, Sayeef Salahuddin, Florencio Sánchez, Konrad Seidel, Takao Shimizu, Takahisa Shiraishi, Stefan Slesazeck, Akira Toriumi, Hiroshi Uchida, Bertrand Vilquin, Xianghan Xu, Kun Hee Ye, Uwe Schroeder
Publikováno v:
APL Materials, Vol 11, Iss 8, Pp 089201-089201-70 (2023)
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors
Externí odkaz:
https://doaj.org/article/bdc8e7ac6d8a4918bcd408390bfda1b5
Autor:
Chanyoung, Yoo, Jeong Woo, Jeon, Seungjae, Yoon, Yan, Cheng, Gyuseung, Han, Wonho, Choi, Byongwoo, Park, Gwangsik, Jeon, Sangmin, Jeon, Woohyun, Kim, Yonghui, Zheng, Jongho, Lee, Junku, Ahn, Sunglae, Cho, Scott B, Clendenning, Ilya V, Karpov, Yoon Kyung, Lee, Jung-Hae, Choi, Cheol Seong, Hwang
Publikováno v:
Advanced materials (Deerfield Beach, Fla.).
Atomic layer deposition (ALD) of Sb
Publikováno v:
IEEE Electron Device Letters. 41:191-194
In this research, we investigate threshold voltage drift in a B-Te based OTS device under various operation conditions. To this aim, drift of threshold voltage after a switching process is examined. From the measurements, we find that the threshold v
Autor:
Eric Pop, Ilya V. Karpov, Kirstin Schauble, Eilam Yalon, Feng Xiong, Sanchit Deshmukh, Feifei Lian
Publikováno v:
IEEE Transactions on Electron Devices. 66:3816-3821
Emerging nonvolatile memories store data by reversible resistive switching in phase-change materials or metal oxides. As memory cell dimensions are reduced to ~10-nm scale or below, electrical contacts can dominate the device behavior, yet are often
Autor:
Albert Chen, Ilya V. Karpov, Yifu Huang, Oleg Golonzka, Chris Connor, Nathan L. Strutt, Jiahan Zhang, Benjamin Sherrill, Tanmoy Pramanik, Jacob Medeiros, David Janosky, Jack C. Lee, Tony Acosta, Reed Hopkins, Abdullah Guler, Pedro A. Quintero, J. Hicks, Yao-Feng Chang, J. O'Donnell
Publikováno v:
IRPS
For the first time, the impact of temperature instability of resistive memory switching on potential neuromorphic computing applications has been extensively studied using eNVM-R and eNVM-M technologies developed on Intel 22FFL process. The reliabili
Autor:
Thomas Mikolajick, Uwe Schroeder, Sou-Chi Chang, Terence Mittmann, Monica Materano, Ilya V. Karpov
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
Hf 0.5 Zr 0.5 O 2 based ferroelectric capacitors are deposited via atomic layer deposition with different oxygen content by tuning the ozone dose time during the oxidation step. The impact of the oxygen content in the layer is evaluated in terms of c
Autor:
Sangmin Lee, Seung-Woo Lee, Donghwa Lee, Ilya V. Karpov, Writam Banerjee, Hyunsang Hwang, Ashish Agrawal, Seonghun Kim
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
We demonstrate driving parameters to control the hybrid-filament (HF) in Ag-based threshold switching (TS) devices. To achieve statistically improved TS behavior, we engineer the nucleation energy barrier, shape of HF and steric repulsion force durin
Autor:
Fatih Hamzaoglu, C. English, Tahir Ghani, Matthew V. Metz, Joodong Park, Pedro A. Quintero, M. Seth, M. Sekhar, Kevin J. Fischer, Seghete Dragos, Ilya V. Karpov, Christopher J. Jezewski, Yao-Feng Chang, P. Bai, Nilanjan Das, Ouellette Daniel G, J. O'Donnell, A. Pirkle, M. Bohr, Pulkit Jain, Umut Arslan, James S. Clarke, A. Sen Gupta, A. Chaudhari, Albert Chen, Blake C. Lin, O. Baykan, Oleg Golonzka, Christopher J. Wiegand, Chris Connor, Roza Kotlyar, Hui Jae Yoo, Nathan L. Strutt, P. Hentges, H. Kothari
Publikováno v:
2019 Symposium on VLSI Technology.
This paper presents key specifications of RRAM-based nonvolatile memory embedded into Intel 22FFL FinFET Technology. 22FFL is a high performance, ultra low power technology developed for mobile and RF applications providing extensive high voltage and
Publikováno v:
IEEE Transactions on Electron Devices. 62:2972-2977
Since thermal effects play a major role in filamentary RRAM devices, we compare the two localized thermometry methods developed for such devices. One method is based on short-pulsed measurements and the other on the measurement of minority-carrier in
Publikováno v:
Physical Review Applied. 8
Despite extensive research, the technology of resistive random-access memory (RRAM) continues to be held back by insufficient understanding of the underlying physics. Using electrostatic and physical-kinetic approaches that are independent of microsc