Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Ilya M. Anfimov"'
Autor:
Yuri V. Drobyshevsky, Ilya M. Anfimov, Valery A. Varlachev, Svetlana P. Kobeleva, Sergey A. Nekrasov, Sergey N. Stolbov
Publikováno v:
Nuclear Energy and Technology, Vol 6, Iss 4, Pp 235-241 (2020)
The article presents an experimental confirmation of the operability of neutron concentrators in devices that form and use directed high-intensity thermal neutron beams with elliptical channels made as blocks of profiled graphite and aluminum plates.
Externí odkaz:
https://doaj.org/article/a26d614be5fe40f485066d7cca7f06e6
Publikováno v:
Modern Electronic Materials, Vol 5, Iss 2, Pp 41-49 (2019)
The effect of the growth atmosphere and the type of deposited current conductive coatings on the impedance/admittance of La3Ta0.5Ga5.5O14 lanthanum-gallium tantalate has been revealed. The lanthanum-gallium tantalate single crystals have been grown i
Externí odkaz:
https://doaj.org/article/1683d6c2b1f04f5cbc8a310a3582bbdb
Publikováno v:
Modern Electronic Materials, Vol 5, Iss 1, Pp 27-32 (2019)
Electrical resistivity distribution maps have been constructed for single crystal silicon wafers cut out of different parts of Czochralski grown ingots. The general inhomogeneity of the wafers has proven to be relatively high, the resistivity scatter
Externí odkaz:
https://doaj.org/article/b11d603a4a3443baac3d724896985226
Autor:
Svetlana P. Kobeleva, Ilya M. Anfimov, Andrei V. Turutin, Sergey Yu. Yurchuk, Vladimir M. Fomin
Publikováno v:
Modern Electronic Materials, Vol 4, Iss 3, Pp 113-117 (2018)
We have analyzed phosphorus diffusion profiles in an In0.01Ga0.99As/In0.56Ga0.44P/Ge germanium structure during phosphorus co-diffusion with gallium for synthesis of the germanium subcell in multi-junction solar cells.. Phosphorus diffused from the I
Externí odkaz:
https://doaj.org/article/942951f586724f0998f309c55726de3c