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pro vyhledávání: '"Ilya A. Rogachev"'
Autor:
Andrey B. Pashkovskii, Sergey V. Shcherbakov, Askhat K. Bakarov, Alexandr B. Grigorenko, K. S. Zhuravlev, Evgeniy V. Tereshkin, Vladimir G. Lapin, Sergey A. Bogdanov, Ilya A. Rogachev, Vladimir M. Lukashin
Publikováno v:
IEEE Transactions on Electron Devices. 68:53-56
In this article, we present GaAs millimeter-wave pseudomorphic high-electron-mobility transistor (pHEMT) using sophisticated AlGaAs-InGaAs–GaAs heterostructure with an In0.22Ga0.78As quantum well located inside an external quantum well formed by sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::389dfcf7d0fe90def831a479ed810702
https://doi.org/10.1109/ted.2020.3038373
https://doi.org/10.1109/ted.2020.3038373
