Zobrazeno 1 - 10
of 179
pro vyhledávání: '"Illarionov, A Yu"'
Autor:
Illarionov, Yury Yu., Knobloch, Theresia, Uzlu, Burkay, Banshikov, Alexander G., Ivanov, Iliya A., Sverdlov, Viktor, Vexler, Mikhail I., Waltl, Michael, Wang, Zhenxing, Manna, Bibhas, Neumaier, Daniel, Lemme, Max C., Sokolov, Nikolai S., Grasser, Tibor
Graphene is a promising material for applications as a channel in graphene field-effect transistors (GFETs) which may be used as a building block for optoelectronics, high-frequency devices and sensors. However, these devices require gate insulators
Externí odkaz:
http://arxiv.org/abs/2309.11233
Autor:
Knobloch, Theresia, Uzlu, Burkay, Illarionov, Yury Yu., Wang, Zhenxing, Otto, Martin, Filipovic, Lado, Waltl, Michael, Neumaier, Daniel, Lemme, Max C., Grasser, Tibor
Despite the enormous progress achieved during the past decade, nanoelectronic devices based on two-dimensional (2D) semiconductors still suffer from a limited electrical stability. This limited stability has been shown to result from the interaction
Externí odkaz:
http://arxiv.org/abs/2104.08172
Autor:
Knobloch, Theresia, Illarionov, Yury Yu., Ducry, Fabian, Schleich, Christian, Wachter, Stefan, Müller, Thomas, Waltl, Michael, Lanza, Mario, Vexler, Mikhail I., Luisier, Mathieu, Grasser, Tibor
Publikováno v:
Nat. Electron. 4 (2021) 98-108
Complementary metal oxide semiconductor (CMOS) logic circuits at the ultimate scaling limit place the utmost demands on the properties of all materials involved. The requirements for semiconductors are well explored and could possibly be satisfied by
Externí odkaz:
http://arxiv.org/abs/2008.04144
Autor:
Illarionov, Yury Yu., Banshchikov, Alexander G., Polyushkin, Dmitry K., Wachter, Stefan, Knobloch, Theresia, Thesberg, Mischa, Stoeger-Pollach, Michael, Steiger-Thirsfeld, Andreas, Vexler, Mikhail I., Waltl, Michael, Sokolov, Nikolai S., Mueller, Thomas, Grasser, Tibor
Two-dimensional (2D) semiconductors have been suggested both for ultimately-scaled field-effect transistors (FETs) and More-than-Moore nanoelectronics. However, these targets can not be reached without accompanying gate insulators which are scalable
Externí odkaz:
http://arxiv.org/abs/1901.10980
Akademický článek
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Akademický článek
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Autor:
Lovato, Alessandro, Benhar, Omar, Fantoni, Stefano, Illarionov, Alexey Yu., Schmidt, Kevin E.
Publikováno v:
Journal of Physics: Conference Series, 336(1):012016, 2011
A density-dependent two-nucleon potential has been derived in the formalism of correlated basis function. The effects of 3-particle interactions has been included by integrating out the degrees of freedom of the third nucleon. The potential can be ea
Externí odkaz:
http://arxiv.org/abs/1210.0214
It is shown that a Bessel-like behaviour of the structure function F2 at small x, obtained for a flat initial condition in the DGLAP evolution equations, leads to good agreement with the deep inelastic scattering experimental data from HERA.
Com
Com
Externí odkaz:
http://arxiv.org/abs/1202.4299
Recent progress on the accurate determination of the equation of state of neutron and nuclear matter
Autor:
Armani, Paolo, Illarionov, Alexey Yu., Lonardoni, Diego, Pederiva, Francesco, Gandolfi, Stefano, Schmidt, Kevin E., Fantoni, Stefano
Publikováno v:
Journal of Physics: Conference Series 336 (2011) 012014
The problem of accurately determining the equation of state of nuclear and neutron matter at density near and beyond saturation is still an open challenge. In this paper we will review the most recent progress made by means of Quantum Monte Carlo cal
Externí odkaz:
http://arxiv.org/abs/1110.0993
Publikováno v:
Phys.Rev.Lett.106:231802,2011
We present a simple formula for the total cross section sigma^{nu N} of neutral- and charged-current deep-inelastic scattering of ultrahigh-energy neutrinos on isoscalar nuclear targets, which is proportional to the structure function F_2^{nu N}(M_V^
Externí odkaz:
http://arxiv.org/abs/1105.2829