Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Iljo Kwak"'
Publikováno v:
Applied Surface Science. 492:239-244
Continuous, uniform, and sub-10 nm Al2O3 high-K dielectrics upon two-dimensional exfoliated multilayer MoTe2 are realized by atomic layer deposition (ALD) based on a nucleation layer (NL) prepared by the ozone-based process, interfacial AlN, and low-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::226f174aa05bf603957c724c87bcce7c
https://doi.org/10.1016/j.apsusc.2019.06.192
https://doi.org/10.1016/j.apsusc.2019.06.192
Autor:
Xinyu Liu, Amritesh Rai, Chenxi Zhang, Suresh Vishwanath, Kyeongjae Cho, Jeongwoon Hwang, Malgorzata Dobrowolska, Iljo Kwak, Sanjay K. Banerjee, Andrew C. Kummel, Huili Grace Xing, Steven Wolf, Jun Hong Park, Jacek K. Furdyna
Publikováno v:
ACS Nano. 13:7545-7555
Chemical functionalization is demonstrated to enhance the p-type electrical performance of two-dimensional (2D) layered tungsten diselenide (WSe2) field-effect transistors (FETs) using a one-step dipping process in an aqueous solution of ammonium sul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4455165adb2a4f3fa6e963fc44e66013
https://doi.org/10.1021/acsnano.8b09351
https://doi.org/10.1021/acsnano.8b09351
Autor:
Sean Kang, Jun Hong Park, Keith Tatseun Wong, Larry Grissom, Andrew C. Kummel, Bernd Fruhberger, Mahmut Sami Kavrik, Iljo Kwak
Publikováno v:
Applied Surface Science. 463:758-766
Al2O3 and Al2O3/HfO2 bilayer gate stacks were directly deposited on the surface of 2D materials via low temperature ALD/CVD of Al2O3 and high temperature ALD of HfO2 without any surface functionalization. The process is self-nucleating even on inert
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9132e0e0b3cec3269a592c75aebdf84
https://doi.org/10.1016/j.apsusc.2018.08.034
https://doi.org/10.1016/j.apsusc.2018.08.034
Autor:
Jun Hong Park, Jeffrey J. Spiegelman, Iljo Kwak, Steven Wolf, Andrew C. Kummel, Michael Breeden, Daniel Alvarez, Mehul Naik, Mahmut Sami Kavrik
Publikováno v:
Applied Surface Science. 462:1029-1035
Thermal ALD of TaNx and TiNx films was performed using hydrazine (N2H4) as a reactive N-containing source. Ultralow temperature (100 °C and 300 °C) growth of TaNx was observed using N2H4 and tris(diethylamido)(tert-butylimido) tantalum (TBTDET); XP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35a7025f9dfd4da901f67541f9922f2c
https://doi.org/10.1016/j.apsusc.2018.07.153
https://doi.org/10.1016/j.apsusc.2018.07.153
Autor:
Iljo Kwak, Maximilian S. Clemons, Scott T. Ueda, Kasra Sardashti, Bernd Fruhberger, Andrew C. Kummel, Serge Oktyabrsky
Publikováno v:
ECS Transactions. 86:281-289
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b47c860c1ca49ec6b5b1fdbdb89c429
https://doi.org/10.1149/08607.0281ecst
https://doi.org/10.1149/08607.0281ecst
Autor:
Hua-Min Li, Alan Seabaugh, Andrew C. Kummel, Cristobal Alessandri, Maja Remškar, Sara Fathipour, Iljo Kwak
Publikováno v:
IEEE Transactions on Electron Devices. 64:5217-5222
A back-gated multilayer nanoribbon molybdenum disulfide (MoS2) transistor grown by chemical vapor transport and doped using polyethylene oxide cesium perchlorate is fabricated and characterized. Ions in the polymer dielectric are directed by side gat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84a812338b8ef2fdfa0380748061ab0e
https://doi.org/10.1109/ted.2017.2767501
https://doi.org/10.1109/ted.2017.2767501
Autor:
Xinyu Liu, Kehao Zhang, Mary Edmonds, Andrew C. Kummel, Jun Hong Park, Joshua A. Robinson, Iljo Kwak, Margaret Dobrowolska, Suresh Vishwanath, Jacek K. Furdyna, Huili Grace Xing, Michael Breeden, Steven Wolf
Publikováno v:
ACS Applied Materials & Interfaces. 9:29255-29264
To fabricate practical devices based on semiconducting two-dimensional (2D) materials, the source, channel, and drain materials are exposed to ambient air. However, the response of layered 2D materials to air has not been fully elucidated at the mole
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d1ea05f2beaf9acf7c4da28565a4a69d
https://doi.org/10.1021/acsami.7b08244
https://doi.org/10.1021/acsami.7b08244
Autor:
Susan K. Fullerton-Shirey, Iljo Kwak, Jun Hong Park, Pabitra Choudhury, Andrew C. Kummel, Lalitasri Ravavar
Publikováno v:
The Journal of Physical Chemistry C. 121:6721-6728
To avoid defects associated with inhomogeneous crystallites and uneven morphology that degrade organic device performance, the deposition of ultraflat and homogeneous crystalline organic active layers is required. The growth mode transition of organi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0724ea69349739dd11b6be788f23c591
https://doi.org/10.1021/acs.jpcc.6b13096
https://doi.org/10.1021/acs.jpcc.6b13096
Autor:
Jun Hong, Park, Amritesh, Rai, Jeongwoon, Hwang, Chenxi, Zhang, Iljo, Kwak, Steven F, Wolf, Suresh, Vishwanath, Xinyu, Liu, Malgorzata, Dobrowolska, Jacek, Furdyna, Huili Grace, Xing, Kyeongjae, Cho, Sanjay K, Banerjee, Andrew C, Kummel
Publikováno v:
ACS nano. 13(7)
Chemical functionalization is demonstrated to enhance the p-type electrical performance of two-dimensional (2D) layered tungsten diselenide (WSe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::38a27f2f76ae2e738bda4cf0a3196d02
https://pubmed.ncbi.nlm.nih.gov/31260257
https://pubmed.ncbi.nlm.nih.gov/31260257
Publikováno v:
ECS Transactions. 75:143-151
Uniform and defect-free Al2O3 films were grown on highly oriented pyrolytic graphite (HOPG) terraces by thermal atomic layer deposition (ALD) at low temperature (50 oC) without any functionalization of the surface. Controlling the pulse times of trim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d18f2fd78126a53ea0d08c5e8697cbb
https://doi.org/10.1149/07505.0143ecst
https://doi.org/10.1149/07505.0143ecst