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Akademický článek

Random Projection‐Based Locality‐Sensitive Hashing in a Memristor Crossbar Array with Stochasticity for Sparse Self‐Attention‐Based Transformer

Autor: Xinxin Wang, Ilia Valov, Huanglong Li

Publikováno v: Advanced Electronic Materials, Vol 10, Iss 10, Pp n/a-n/a (2024)

Abstract Self‐attention mechanism is critically central to the state‐of‐the‐art transformer models. Because the standard full self‐attention has quadratic complexity with respect to the input's length L, resulting in prohibitively large mem

Externí odkaz: https://doaj.org/article/29808aeb5d76400dbe10823b154107f1

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Akademický článek

Effect of electrode materials on resistive switching behaviour of NbOx-based memristive devices

Autor: Giuseppe Leonetti, Matteo Fretto, Fabrizio Candido Pirri, Natascia De Leo, Ilia Valov, Gianluca Milano

Publikováno v: Scientific Reports, Vol 13, Iss 1, Pp 1-10 (2023)

Abstract Memristive devices that rely on redox-based resistive switching mechanism have attracted great attention for the development of next-generation memory and computing architectures. However, a detailed understanding of the relationship between

Externí odkaz: https://doaj.org/article/8fcc833c35d941b794df732898a3325c

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Akademický článek

Rebooting Computing in Post Moore Era

Autor: Yuchao Yang, Ilia Valov

Publikováno v: Advanced Intelligent Systems, Vol 4, Iss 8, Pp n/a-n/a (2022)

Externí odkaz: https://doaj.org/article/f05eaf0341ff463196802cd6f4b52eda

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Akademický článek

Simulating the filament morphology in electrochemical metallization cells

Autor: Milan Buttberg, Ilia Valov, Stephan Menzel

Publikováno v: Neuromorphic Computing and Engineering, Vol 3, Iss 2, p 024010 (2023)

Electrochemical metallization (ECM) cells are based on the principle of voltage controlled formation or dissolution of a nanometer-thin metallic conductive filament (CF) between two electrodes separated by an insulating material, e.g. an oxide. The l

Externí odkaz: https://doaj.org/article/c61c292d09dd4aa9b1e5de1909fcbfbd

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Akademický článek

Editorial: Focus issue on 2D materials for neuromorphic computing

Autor: Feng Miao, J JoshuaYang, Ilia Valov, Yang Chai

Publikováno v: Neuromorphic Computing and Engineering, Vol 3, Iss 1, p 010201 (2023)

Externí odkaz: https://doaj.org/article/57ae8126ee7e4b2faf856062d6eb541b

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Akademický článek

Self-limited single nanowire systems combining all-in-one memristive and neuromorphic functionalities

Autor: Gianluca Milano, Michael Luebben, Zheng Ma, Rafal Dunin-Borkowski, Luca Boarino, Candido F. Pirri, Rainer Waser, Carlo Ricciardi, Ilia Valov

Publikováno v: Nature Communications, Vol 9, Iss 1, Pp 1-10 (2018)

Memristors have become an emerging technology capable in emulating human brain information processing, but understanding and controlling the switching mechanism remains elusive. Here, Milano et al. combine memristive and neuromorphic functionalities

Externí odkaz: https://doaj.org/article/368b8c1c9b7f40c180df696aa14c941f

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Akademický článek

Brain‐Inspired Structural Plasticity through Reweighting and Rewiring in Multi‐Terminal Self‐Organizing Memristive Nanowire Networks

Autor: Gianluca Milano, Giacomo Pedretti, Matteo Fretto, Luca Boarino, Fabio Benfenati, Daniele Ielmini, Ilia Valov, Carlo Ricciardi

Publikováno v: Advanced Intelligent Systems, Vol 2, Iss 8, Pp n/a-n/a (2020)

Acting as artificial synapses, two‐terminal memristive devices are considered fundamental building blocks for the realization of artificial neural networks. Current memristive crossbar architectures demonstrate the implementation of neuromorphic co

Externí odkaz: https://doaj.org/article/d955f1924f2343cfa39bb8854cb0513e

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