Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Ilgyou Shin"'
Autor:
Jung Yeon Won, Jinyong Kim, Tae-Gon Kim, Sungho Lee, Jin-Bum Kim, Seongpyo Hong, Hyung-Ik Lee, Hyoungsub Kim, Ilgyou Shin, Hoo-Jeong Lee, Seongheum Choi, Ki-Hyun Hwang, Yihwan Kim, Taejin Park
Publikováno v:
Journal of Alloys and Compounds. 788:1013-1020
Pulsed-laser annealing (PLA) was performed on a preformed Pt-doped Ni-rich silicide film (Ni2Si phase), and its microstructural and phase evolution were studied from submelting to melting condition by varying the laser power density (P). Vertically n
Autor:
Hyoungsub Kim, Jin-Bum Kim, Yoo Jeong-Ho, Ilgyou Shin, Jung-Hwa Kim, Yihwan Kim, Seongheum Choi, Ki-Hyun Hwang, Jinyong Kim, Hyangsook Lee, Taejin Park, Eunha Lee, Seok-Hoon Kim
Publikováno v:
Microelectronic Engineering. 205:14-19
The objective of this study was to determine detailed microstructure of a Ni1–xPtxSi film formed via a melting/quenching process using high temperature laser annealing on a Si(001) substrate. The orthorhombic Ni1–xPtxSi film was found to be able
Publikováno v:
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
Automatic flow of transmission electron microscopy (TEM)-based dislocation analysis on Source/Drain (S/D) and contact formation process is developed. Based on the previously developed model of dislocation stress, an automated methodology is implement
Autor:
Soo-Young Lee, Chan-Uk Jeon, Hwasuk Cho, Joo-Sun Choi, Byeong-jae Kim, Sookhyun Lee, Xinyu Zhao, Ilgyou Shin
Publikováno v:
Microelectronic Engineering. 133:78-87
Display Omitted Behaviors of LER caused by the stochastic exposure have been analyzed.LER decreases from the inside of a feature to the outside.LER is smaller for a higher beam energy, a higher dose, or a thinner resist.LER is smaller for a smaller e
Autor:
Ilgyou Shin, Carter, Emily A.
Publikováno v:
Journal of Chemical Physics; 5/14/2014, Vol. 140 Issue 18, p18A531-1-18A531-14, 14p
Autor:
Emily A. Carter, Ilgyou Shin
Publikováno v:
International Journal of Plasticity. 60:58-70
The strength and ductility of metals are governed by the motion of dislocations, which is quantified by the Peierls stress (σp). We use orbital-free density functional theory (OFDFT) to characterize the motion of 1 3 〈 1 1 2 ¯ 0 〉 dislocations
Autor:
Soo-Young Lee, Joo-Sun Choi, Hwasuk Cho, Byeong-jae Kim, Chan-Uk Jeon, Rui Guo, Q. Dai, Ilgyou Shin
Publikováno v:
Microelectronic Engineering. 127:86-96
A three-dimensional (3-D) remaining resist profile often needs to be estimated and examined especially for nanoscale feature. However, conventional methods, such as the cell removal method and fast marching method, require intensive computation, and
Autor:
Emily A. Carter, Ilgyou Shin
Publikováno v:
Acta Materialia. 64:198-207
First-principles quantum mechanics is an increasingly important tool for predicting material properties when designing novel alloys with optimized mechanical properties. In this study, we employ first-principles orbital-free density functional theory
Autor:
Mohan Chen, Junchao Xia, Ilgyou Shin, Linda Hung, Emily A. Carter, Chen Huang, Johannes M. Dieterich
Publikováno v:
Computer Physics Communications. 190:228-230
Orbital-free density functional theory (OFDFT) is a linear-scaling first-principles quantum mechanics method used to calculate the ground-state energy of a given system. Here we present a new version of PRinceton Orbital-Free Electronic Structure Sof
Publikováno v:
Philosophical Magazine. 89:3195-3213
The core structure of screw and edge dislocations in fcc Al was investigated using orbital-free density functional theory (OF-DFT). Detailed calibrations of kinetic energy density functionals (KEDFs) and local pseudopotentials were performed to repro