Zobrazeno 1 - 10
of 53
pro vyhledávání: '"Ilgweon Kim"'
Autor:
Byoungdeog Choi, Jinhyuk Yoo, Jeong-Hoon Oh, Ilgweon Kim, Junhwa Song, Jihun Kim, Hyoungsub Kim, Youngseung Cho
Publikováno v:
Journal of nanoscience and nanotechnology. 20(11)
In order to reduce contact resistance (Rc) of the source/drain region in nanoscale devices, it is essential to overcome the increasing leakage and hot-electron-induced punch through (HEIP) degradation. In this paper, we propose a simple in situ Si so
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ccaf41fe7e7ed613bffa2874e8d0407c
https://pubmed.ncbi.nlm.nih.gov/32604485
https://pubmed.ncbi.nlm.nih.gov/32604485
Publikováno v:
2020 International Conference on Electronics, Information, and Communication (ICEIC).
In this work we have investigated the impact of contact resistance reduction on cold temperature characteristics of MOSFETs. We used a simple in-situ Si soft treatment technique right after direct contact etching to reduce the contact resistance. We
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3f5b34f0b6a2db556e220f5d03a2172
https://doi.org/10.1109/iceic49074.2020.9051084
https://doi.org/10.1109/iceic49074.2020.9051084
Autor:
Jeong-Hoon Oh, Hyuck-Chai Jung, Ilgweon Kim, Gyo-Young Jin, Hyoungsun Hong, Segeun Park, Yonghan Roh
Publikováno v:
Microelectronics Reliability. 65:16-19
For the first time, the current failure of p-channel MOSFETs used for the sub-wordline driver of state-of-the-art DRAM chips was investigated during off-state switching cycles. With increasing switching speed for the sub-wordline driver, the subthres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4868912ac5e35074480c73df9376c5e0
https://doi.org/10.1016/j.microrel.2016.08.007
https://doi.org/10.1016/j.microrel.2016.08.007
Autor:
Jung-Hwan Choi, In-Dal Song, Jin-Oh Ahn, Kwang-Il Park, Daesik Moon, Dong-Ju Kim, Kyung-Soo Kim, Jin-Seok Heo, Seung-Jun Bae, Seokhong Kwon, Young-Soo Sohn, Jin-Hyeok Baek, Jongmin Kim, Byung-Cheol Kim, Hyuck-Joon Kwon, Chang-Kyo Lee, Seong-Jin Jang, Jeonghyeon Cho, Min-Su Ahn, Jeong-Sik Nam, Ilgweon Kim, Seok-Hun Hyun, Jeong-Hoon Oh, Gil-Hoon Cha, Jae-Joon Song, Ki-Ho Kim
Publikováno v:
VLSI Circuits
A sub-0.85V, 6.4Gb/s TX-interleaved transceiver with fast wake-up time using 2-step charging control and a V OH calibration scheme is implemented using 20nm DRAM process. Adopting an interleaving scheme based on improved DRAM process, the proposed de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d55ad90ea415991e854486a0366baf5f
https://doi.org/10.1109/vlsic.2018.8502299
https://doi.org/10.1109/vlsic.2018.8502299
Autor:
Jeong-Hoon Oh, Hyoungsun Hong, Yonghan Roh, Ilgweon Kim, Hyeongwon Seo, Segeun Park, Gyo-Young Jin
Publikováno v:
IEEE Electron Device Letters. 37:859-861
We clarify the role of metal gates (e.g., TiN) on the degradation of the state-of-the-art buried-channel-array transistor (B-CAT) in dynamic random access memory (DRAM) chips. Unless the thermal budget during the processing step for integration is we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c73d79f9beabbd0efb3f53c29854fdd4
https://doi.org/10.1109/led.2016.2563159
https://doi.org/10.1109/led.2016.2563159
Publikováno v:
Microelectronic Engineering. 119:32-36
We realized Sphere-shaped-recess-cell-array-transistor to improve short channel effect.Negative shift of threshold voltage and increase of swing were observed after FN stress.The degradation was improved by small grain sized gate electrode and radica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fc2adb3cd6b270caefcbb981d18a0b2
https://doi.org/10.1016/j.mee.2014.01.011
https://doi.org/10.1016/j.mee.2014.01.011
Autor:
Dae Jung Kim, Bonggu Sung, Gyo-Young Jin, Ilwoo Jung, Ilgweon Kim, Hyoungsub Kim, Byoungdeok Choi
Publikováno v:
International Symposium for Testing and Failure Analysis.
Body effect is the key characteristic of DRAM cell transistor. Conventional method uses a TEG structure for body effect measurement. But this measurement is not accurate, because TEG structure has only several transistors and it is located outside of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f788e707ff8ce41cb866a3a38ac81cae
https://doi.org/10.31399/asm.cp.istfa2016p0085
https://doi.org/10.31399/asm.cp.istfa2016p0085
Autor:
Ilsub Chung, Hongsun Hwang, Duan Sun, Sangjae Rhe, Ilgweon Kim, Kangil Kim, Kangyong Cho, Gyo-Young Jin
Publikováno v:
2016 IEEE International Integrated Reliability Workshop (IIRW).
We investigated threshold voltage degradation and recovery of short channel NMOS transistors in the sub wordline driver (SWD), where the source of NMOS transistors was biased with negative voltage during off-state. We found that the threshold voltage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc522f2b3634dc010dd2aa16cfed6b7e
https://doi.org/10.1109/iirw.2016.7904910
https://doi.org/10.1109/iirw.2016.7904910
Publikováno v:
Japanese Journal of Applied Physics. 42:4998-5001
The impact of high-density plasma (HDP) film over a bit line on the hump effect of n-type metal oxide silicon field effect transistor (nMOSFET) has been intensively investigated. In this work, it was found that the hump effect of nMOSFET is mainly du
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73e71a41b9c8e703f95b4b49dbe37a33
https://doi.org/10.1143/jjap.42.4998
https://doi.org/10.1143/jjap.42.4998
Publikováno v:
Japanese Journal of Applied Physics. 42:2086-2090
Dynamic random access memory (DRAM) cell for suppressing the anomalous threshold voltage (VT) lowering due to interlayer dielectric (ILD)-related edge channel effect has been intensively investigated. Our work verifies that anomalous edge channel eff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de7fb9a7ab88e072c34c91b95f3ccc82
https://doi.org/10.1143/jjap.42.2086
https://doi.org/10.1143/jjap.42.2086