Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Ilaria Matacena"'
Autor:
Ilaria Matacena, Luca Maresca, Michele Riccio, Andrea Irace, Giovanni Breglio, Santolo Daliento
Publikováno v:
e-Prime: Advances in Electrical Engineering, Electronics and Energy, Vol 5, Iss , Pp 100251- (2023)
SiC MOSFTEs are widely used nowadays for a large number of power applications. Even though they are more performant than their Silicon counterpart, they suffer from some issues which are still unsolved. Among these, the high traps concentration exist
Externí odkaz:
https://doaj.org/article/7e5134bb6cca4c72b936e1eccf317796
Autor:
Ilaria Matacena, Pierluigi Guerriero, Laura Lancellotti, Brigida Alfano, Antonella De Maria, Vera La Ferrara, Lucia V. Mercaldo, Maria Lucia Miglietta, Tiziana Polichetti, Gabriella Rametta, Gennaro V. Sannino, Paola Delli Veneri, Santolo Daliento
Publikováno v:
Energies, Vol 16, Iss 13, p 4951 (2023)
The aim of this work is to investigate the degradation of perovskite solar cells (PSCs) by means of impedance spectroscopy, a highly sensitive characterization technique used to establish the electrical response of a device in a nondestructive manner
Externí odkaz:
https://doaj.org/article/9b5d88ebff3e47c0a1d9371649a22ec0
Autor:
Carla Gobbo, Valerio Di Palma, Vanira Trifiletti, Claudia Malerba, Matteo Valentini, Ilaria Matacena, Santolo Daliento, Simona Binetti, Maurizio Acciarri, Giorgio Tseberlidis
Publikováno v:
Energies, Vol 16, Iss 10, p 4137 (2023)
Cu2ZnSnS4 (CZTS) is a promising absorber material to produce thin film solar cells thanks to its high absorption coefficient, low cost and low toxicity. CdS is commonly used as a buffer layer for CZTS solar cells but, beyond its toxicity, it has a no
Externí odkaz:
https://doaj.org/article/1fc8934ac0654d129cc1026817f501fc
Autor:
Ilaria Matacena, Laura Lancellotti, Nicola Lisi, Paola Delli Veneri, Pierluigi Guerriero, Santolo Daliento
Publikováno v:
Energies, Vol 13, Iss 8, p 1908 (2020)
In this work, front contacts for graphene-based solar cells are made by means of colloidal graphite instead of gold. The performance is characterized by exploiting impedance spectroscopy and is compared to the standard gold contact technology. Impeda
Externí odkaz:
https://doaj.org/article/e15575eace604426816903c47ac9aec4
Autor:
Daliento, Ilaria Matacena, Pierluigi Guerriero, Laura Lancellotti, Brigida Alfano, Antonella De Maria, Vera La Ferrara, Lucia V. Mercaldo, Maria Lucia Miglietta, Tiziana Polichetti, Gabriella Rametta, Gennaro V. Sannino, Paola Delli Veneri, Santolo
Publikováno v:
Energies; Volume 16; Issue 13; Pages: 4951
The aim of this work is to investigate the degradation of perovskite solar cells (PSCs) by means of impedance spectroscopy, a highly sensitive characterization technique used to establish the electrical response of a device in a nondestructive manner
Autor:
Rosa Chierchia, Pierluigi Guerriero, Paola Delli Veneri, Santolo Daliento, Ilaria Matacena, Laura Lancellotti, Eugenia Bobeico, Nicola Lisi
Publikováno v:
Solar Energy. 226:1-8
In this paper a technique based on the analysis of forward bias capacitance for interface characterization in Schottky structure is proposed. In particular, the occurrence of multiple peaks in the capacitance-voltage curve was related to non-uniform
Autor:
Ilaria Matacena, Giovanni Breglio, Andrea Irace, Luca Maresca, Santolo Daliento, Michele Riccio
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 9:2171-2179
The reduction of the trap density at the SiC/SiO2 interface of a SiC metal–oxide–semiconductor field-effect transistor (MOSFET) is still an open issue for development of the next generation. Since TCAD simulations are one of the most powerful too
Autor:
Ilaria Matacena, Luca Maresca, Michele Riccio, Andrea Irace, Giovanni Breglio, Santolo Daliento, Alberto Castellazzi
Even if SiC MOSFETs technology has undergone huge progress in last years, there are some issues still open, such as high traps density at the SiO2/SiC interface. This work focuses on the measurement of the Gate capacitance when a DC bias is applied b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8609c8c999d7dd08f990b4c3a002e7e7
https://hdl.handle.net/11588/906181
https://hdl.handle.net/11588/906181
Autor:
Ilaria Matacena, Luca Maresca, Michele Riccio, Andrea Irace, Giovanni Breglio, Alberto Castellazzi, Santolo Daliento
In this paper the effects of SiC/SiO2 interface traps on SiC MOSFETs Gate Capacitance are investigated when a positive bias is applied at the Drain terminal. The Gate capacitance arising from this configuration shows an unexpected sharp peak, exceedi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c28680ef40b2d9d1cd76a4fe0c5224bb
https://hdl.handle.net/11588/906177
https://hdl.handle.net/11588/906177
Autor:
Paola Delli Veneri, Pierluigi Guerriero, Nicola Lisi, Ilaria Matacena, Santolo Daliento, Laura Lancellotti
Publikováno v:
Energies; Volume 13; Issue 8; Pages: 1908
Energies, Vol 13, Iss 1908, p 1908 (2020)
Energies, Vol 13, Iss 1908, p 1908 (2020)
In this work, front contacts for graphene-based solar cells are made by means of colloidal graphite instead of gold. The performance is characterized by exploiting impedance spectroscopy and is compared to the standard gold contact technology. Impeda