Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Ilaria Imperiale"'
Autor:
Franz-Josef Niedernostheide, Thorsten Arnold, Roman Baburske, Ilaria Imperiale, Hans-Jurgen Thees, Philipp Ross, Frank Wolter, Alexander Philippou, Erich Griebl
Publikováno v:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
The micro-pattern trench (MPT) cell topology is a common front-side concept for current IGBT technologies, used in voltage classes ranging from 650 V to 1200 V and higher. In contrast, the side-gate concept is mostly applied to higher voltage classes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ff5deacab50dfd099fa5baefe516dfb
https://doi.org/10.1109/ispsd46842.2020.9170037
https://doi.org/10.1109/ispsd46842.2020.9170037
Autor:
Anton Mauder, Alexander Philippou, Erich Griebl, Ilaria Imperiale, Hans-Jurgen Thees, Thorsten Arnold, Christian Philipp Sandow, Franz Josef Niedernostheide, Frank Wolter, Roman Baburske
Publikováno v:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
This work presents a novel scaling approach for IGBTs which applies constant electric-field scaling while keeping the short-circuit current density, the on-state charge carrier distribution and the external parasitics unchanged. A state-of-the-art 12
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20cf5df27ebef0311143dcfea2dcbaa4
https://doi.org/10.1109/ispsd46842.2020.9170076
https://doi.org/10.1109/ispsd46842.2020.9170076
Autor:
Thorsten Arnold, Franz Hirler, Alexander Philippou, Moritz Hauf, Ilaria Imperiale, Roman Baburske, Hans-Jurgen Thees, Christian Philipp Sandow, Rudolf Elpelt
Publikováno v:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
The conduction losses of trench insulated-gate bipolar transistors (TIGBTs) can be reduced using a larger channel width, but their short-circuit ruggedness degrades without taking an appropriate countermeasure. Here, we propose a short-circuit rugged
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::193d19a29b3bf3d107e49b4a8910fe7a
https://doi.org/10.1109/ispsd46842.2020.9170175
https://doi.org/10.1109/ispsd46842.2020.9170175
Autor:
Alejandro Hernandez-Luna, Dhanoop Varghese, Woojin Ahn, Srikanth Krishnan, Giorgio Baccarani, Luu Nguyen, Ilaria Imperiale, Antonio Gnudi, Susanna Reggiani, Muhammad A. Alam, Giuseppe Pavarese, Elena Gnani
Publikováno v:
IEEE Transactions on Electron Devices. 64:1209-1216
High electric fields and temperatures in high-voltage ICs (HV-ICs) can induce charge transport phenomena in the encapsulation material leading to reliability test failures. In this paper, the resistivity of epoxy-based resins with insulating microfil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b78c7be99f5caf8049d2f97cbb070c63
https://doi.org/10.1109/ted.2016.2645080
https://doi.org/10.1109/ted.2016.2645080
Autor:
Giorgio Baccarani, Ilaria Imperiale, Susanna Reggiani, Elena Gnani, Alex Hernandez-Luna, James R. Huckabee, Marie Denison, Antonio Gnudi, Luu Nguyen, Dhanoop Varghese
Four molding-compound composites with different silica micro-filler size and concentration have been measured on top of dedicated IC test structures. The leakage current of charge sensors has been monitored under different high-voltage stress during
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6f779a9c8044bf59c95d5c6c21afc32c
http://hdl.handle.net/11585/521269
http://hdl.handle.net/11585/521269
Autor:
James R. Huckabee, Giorgio Baccarani, Alex Hernandez-Luna, Susanna Reggiani, Marie Denison, Ilaria Imperiale, Elena Gnani, G. Arienti, Antonio Gnudi, L. Nguyen
The sensitivity of HV RESURF LDMOS transistors to parasitic charging in molding compound is investigated in this work by incorporating the passivation and encapsulation layers in the TCAD setup and implementing the conductivity losses in the mold. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8f2a68074bc5f98b6795e3e773a15912
http://hdl.handle.net/11585/521336
http://hdl.handle.net/11585/521336
Autor:
Giorgio Baccarani, James R. Huckabee, Antonio Gnudi, L. Nguyen, F. Monti, Alex Hernandez-Luna, Marie Denison, N. Tipirneni, Susanna Reggiani, Ilaria Imperiale, Elena Gnani
The electron and hole impact-ionization coefficients in AlxGa1-xN have been calibrated through a Chynoweth law by using a Monte Carlo theoretical study and experimental data at different ambient temperatures. The model has been used to investigate th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fbffc3e740fadd62c04178e88c78ddd8
http://hdl.handle.net/11585/521330
http://hdl.handle.net/11585/521330
Autor:
Ilaria Imperiale, Marie Denison, Antonio Gnudi, Elena Gnani, L. Nguyen, Susanna Reggiani, Giorgio Baccarani
Publikováno v:
ESSDERC
In high-voltage integrated circuits operating at high temperatures, charge transport phenomena can occur in the encapsulation layer as a consequence of the electric field spreading out from the high-voltage bondpads/bondwires. In this work, the most
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1de156434409c3fa9b74d9ec7e3e46ac
https://doi.org/10.1109/essderc.2014.6948826
https://doi.org/10.1109/essderc.2014.6948826
Autor:
Elena Gnani, L. Nguyen, Marie Denison, Susanna Reggiani, Ilaria Imperiale, Antonio Gnudi, Giorgio Baccarani
In high-voltage integrated circuits (HV-ICs) operating at high temperatures, the high electric field spreading out from the high-voltage bond-pad can induce charge transport phenomena in the encapsulation material. A new TCAD-based approach is propos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::22888db460bb2c3d29f7b7719ecf8054
http://hdl.handle.net/11585/463574
http://hdl.handle.net/11585/463574
Autor:
Roberto Grassi, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani, Ilaria Imperiale, Elena Gnani
In this paper, we present a mode space method for atomistic non-equilibrium Green's function simulations of armchair graphene nanoribbon FETs that includes electron-phonon scattering. With reference to both conventional and tunnel FET structures, we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d5c2321cf36047c9eef9429f3cbf7034